Self-formation of sub-10 nm nanogaps based on silicidation

Abstract

We have developed a simple and reliable method for the fabrication of sub-10 nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and silicon atoms during the silicidation process. The nanogap width is determined by the metal layer thickness. Our proposed method can produce symmetric and asymmetric electrode nanogaps, as well as multiple nanogaps within one unique process step, for potential application to biological/chemical sensors and nanoelectronics, such as resistive switches, storage devices, and vacuum channel transistors. This method provides high throughput and it is suitable for large-scale production.

Friction effect of stator in a multi-walled CNT-based rotation transmission system

“…Nanomachines have attracted more attention recently due to the rapid progress of nanotechnology [1][2][3][4] and urgent requirements in chemical and bio-engineering [5][6][7]. In particular, the 2016 Nobel Prize in Chemistry was issued to three scientists who have made brilliant contributions to the field [8].…”