Self-doped p–n junctions with high carrier concentration in 2D GaN/MoSSe heterostructures: a first-principles study

Deng, Dawei; Si, Rutong; Wen, Bo; Seriani, Nicola; Wei, Xiao-Lin; Yin, Wen-Jin; Gebauer, Ralph

doi:10.1039/d3ta04322c

J. Mater. Chem. A

2023

DOI: 10.1039/d3ta04322c

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Self-doped p–n junctions with high carrier concentration in 2D GaN/MoSSe heterostructures: a first-principles study

Dawei Deng,

Rutong Si,

Bo Wen

et al.

Abstract: A nonvolatile self-doping strategy through fabricating two different 2D polar semiconductors (GaN/MoSSe) into vdW heterostructures could theoretically achieve high concentrations of carriers (>3.48 × 1012).

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Dumbbell shaped nanocomposite Co3O4/CeO2 derived from metal-organic frameworks (MOFs) as an excellent non-enzymatic glucose sensor

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Cheng,

Yao

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Solid State Sciences

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Dumbbell shaped nanocomposite Co3O4/CeO2 derived from metal-organic frameworks (MOFs) as an excellent non-enzymatic glucose sensor

Yang,

Cheng,

Yao

et al. 2024

Solid State Sciences

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Self-doped p–n junctions with high carrier concentration in 2D GaN/MoSSe heterostructures: a first-principles study

Abstract: A nonvolatile self-doping strategy through fabricating two different 2D polar semiconductors (GaN/MoSSe) into vdW heterostructures could theoretically achieve high concentrations of carriers (>3.48 × 1012).

Cited by 1 publication

References 50 publications

Dumbbell shaped nanocomposite Co3O4/CeO2 derived from metal-organic frameworks (MOFs) as an excellent non-enzymatic glucose sensor

Dumbbell shaped nanocomposite Co3O4/CeO2 derived from metal-organic frameworks (MOFs) as an excellent non-enzymatic glucose sensor

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