Self-alignment of self-assembled InAs quantum dots

Hong, Sung Ui; Lee, Jun Young; Kwack, Ho-Sang; Han, Won-Seok; Oh, Dae Kon

doi:10.1016/j.jcrysgro.2005.09.048

Cited by 6 publications

(2 citation statements)

References 17 publications

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“…The basic structure for both QD samples was exactly same, where the InAs QD layer was embedded in a simple GaAs matrix. More specific growth conditions and resultant formation characteristics for the shapeengineered QDs were given in the previous report [13]. Fig.…”

Section: Methodsmentioning

confidence: 99%

Structural and optical properties of shape-engineered InAs quantum dots in a GaAs matrix emitting at 1.27μm

Lee

Hong

2007

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Structural and optical properties of shape-engineered InAs quantum dots in a GaAs matrix emitting at 1.27μm

Lee

Hong

2007

Journal of Crystal Growth

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“…The ordering of SAQDs has been matter of concern in fostering the development of quantum dot based devices. 54 There are two types of order, spatial and size. Spatial order is concerned with the uniformity of the spacings between the SAQDs and size order is concerned with the uniformity in the size of the SAQDs.…”

Section: 53mentioning

confidence: 99%

Effects of elastic heterogeneity and anisotropy on the morphology of self-assembled epitaxial quantum dots

Kumar¹,

Friedman²

2008

Journal of Applied Physics

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Epitaxial self-assembled quantum dots (SAQDs) are of both technological and fundamental interest, but their reliable manufacture still presents a technical challenge. To better understand the formation, morphology and ordering of epitaxial self-assembled quantum dots (SAQDs), it is essential to have an accurate model that can aid further experiments and predict the trends in SAQD formation. SAQDs form because of the destabilizing effect of elastic mismatch strain, but most analytic models and some numerical models of SAQD formation either assume an elastically homogeneous anisotropic film-substrate system or assume an elastically heterogeneous isotropic system. In this work, we perform the full film-substrate elastic calculation. Then we incorporate the elasticity calculation into a stochastic linear growth model. We find that using homogeneous elasticity can cause errors in the elastic energy density as large as 26%, and for typical modeling parameters lead to errors of about 11% in the estimated value of average dot spacing. We also quantify the effect of elastic heterogeneity on the order estimates of SAQDs and confirm previous finding on the possibility of order enhancement by growing a film near the critical film height.

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Luminescence properties of InAs quantum dots formed by a modified self-assembled method

Kim

Ryu

2012

Journal of Luminescence

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Self-alignment of self-assembled InAs quantum dots

Cited by 6 publications

References 17 publications

Structural and optical properties of shape-engineered InAs quantum dots in a GaAs matrix emitting at 1.27μm

Structural and optical properties of shape-engineered InAs quantum dots in a GaAs matrix emitting at 1.27μm

Effects of elastic heterogeneity and anisotropy on the morphology of self-assembled epitaxial quantum dots

Luminescence properties of InAs quantum dots formed by a modified self-assembled method

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