Proceedings of the 2014 on International Symposium on Physical Design 2014
DOI: 10.1145/2560519.2560530
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Self-aligned double patterning aware pin access and standard cell layout co-optimization

Abstract: Self-Aligned Double Patterning (SADP) is being considered for use at the 10nm technology node and below for routing layers with pitches down to ∼50nm because it has better LER and overlay control compared to other multiple patterning candidates. To date, most of the SADP-related literature has focused on enabling SADP-legal routing in physical design tools while few attempts have been made to address the impact SADP routing has on local, standard cell (SC) I/O pin access. In this paper, we present the first st… Show more

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Cited by 23 publications
(9 citation statements)
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“…Our cell routing framework is targeting at 10nm technology node with SADP process. The regular gridded based design rules [19] and SADP-specific design rules [20] are adapted in our work.…”
Section: Resultsmentioning
confidence: 99%
See 4 more Smart Citations
“…Our cell routing framework is targeting at 10nm technology node with SADP process. The regular gridded based design rules [19] and SADP-specific design rules [20] are adapted in our work.…”
Section: Resultsmentioning
confidence: 99%
“…CA strips can be extended in vertical direction to make power and ground connections to the transistors or to connect P transistors and N transistors together. All the Metal-1 and MOL wires must be compliant with a set of design rules [19,20]. Since CA and Metal-1 are different layers, intersection of two perpendicular wire segments is allowed.…”
Section: Problem Formulationmentioning
confidence: 99%
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