2014
DOI: 10.1364/ol.39.001768
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Second-harmonic generation in a silicon-carbide-based photonic crystal nanocavity

Abstract: We demonstrate second-harmonic generation (SHG) in a silicon-carbide (SiC)-based heterostructure photonic crystal nanocavity by using a pulsed laser. We observe SHG light radiated from the SiC nanocavity and estimate the conversion efficiency in the cavity to be 2.59×10(-5) (=0.15  W(-1)) at an average input power of 0.17 mW. The near-field patterns and polarization characteristics of the SHG light are investigated experimentally and theoretically, and the results are in qualitatively good agreement.

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Cited by 83 publications
(70 citation statements)
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“…The generated harmonic originating from the bulk nonlinearity is propagating and appears to be strongly scattered upon interaction with the PhC lattice. The extended parallel lines previously reported in SHG experiments are present in both cavities, 6,18 along with the cross-shaped pattern, where the second harmonic is seen to traverse the lattice along the ΓK direction. With the H0 cavity, a ring appears at the center, overlapping with the position of the first set of holes surrounding the polarization hotspots.…”
Section: Apl Photonics 2 031301 (2017)supporting
confidence: 65%
“…The generated harmonic originating from the bulk nonlinearity is propagating and appears to be strongly scattered upon interaction with the PhC lattice. The extended parallel lines previously reported in SHG experiments are present in both cavities, 6,18 along with the cross-shaped pattern, where the second harmonic is seen to traverse the lattice along the ΓK direction. With the H0 cavity, a ring appears at the center, overlapping with the position of the first set of holes surrounding the polarization hotspots.…”
Section: Apl Photonics 2 031301 (2017)supporting
confidence: 65%
“…Recently, Raman lasing in high Q silicon PCCs was demonstrated [6], while the χ (2) processes of second harmonic generation (SHG) and sum frequency generation (SFG) have also been demonstrated in such cavities in III-V semiconductors [17][18][19][20][21][22][23], as well as in other materials such as lithium niobate [24], SiC [25] and Si [26]. However, as described above, the difficulty in engineering cavities with modes that are far apart in frequency has limited the ability to increase the efficiency at low power levels.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, there has been increasing interest in optical parametric processes in high-Q micro-/nano-cavities, which exhibit great potential for dramatically enhancing parametric generation [6][7][8][9][10][11][12][13][14][15][16][17][18][19] . However, their efficiencies rely crucially on frequency matching among the interacting cavity modes, which is generally deteriorated by device dispersion.…”
mentioning
confidence: 99%