Scintillation detectors and systems of radiation monitoring on their base

Nuclear Radiation Detection Scintillators based on ZnSe(Te) crystals.

“…Preparation technology of scintillation crystals ZnSe(Te) is based on the known method of crystal growth from the melt [12] using the Bridgman technique in vertical compression, furnaces under inert gas (argon) pressure up to 5 · 10 6 Pa. Growth rate is 2 -5 mm/hour, with temperature in the melt zone -up to 1850 K; crystals are grown in graphite crucibles. After growth, crystals are annealed in a vapour of Zn for enhancement and spectral stabilization of luminescence in the 610 -640 nm region.…”

“…To determine optimum technological parameters of the preparation process of ZnSe(Te) , we have studied in detail physical chemistry, thermodynamics and kinetics of interaction of the components in the system ZnSe -ZnTe, by accounting for the composition of the gaseous medium and construction materials of the growth equipment [12][13][14]. The technology developed by us allows one to obtain reproducibly two types of ZnSe(Te) crystals (mass up to 600 g, diameter up to 40 mm), which are called conventionally "fast" and "slow" scintillators.…”

Injection and Optical Spectroscopy of Localized States in II-VI Semiconductor Films

“…CVCs of high-temperature condensates in the range of high field strength a set of linear sections with various slopes to the U-axis was observed. As a rule, the sections with functions: I -U, I -U 2 , I -U [3][4][5] , I -U [8][9][10] were the most pronounced. In some cases after superlinear sections we have observed a square dependence I on U, which had further changed again to the supelinear one with a very large slope  (  13-25).…”

“…[1][2]. Large density of some semiconductors (CdTe, ZnTe, CdSe) makes them suitable for detectors of hard radiation and -particles flow [4][5]. The mutual solubility is also important property of these materials.…”

“…Poly-and monocrystalline films of II-VI semiconductors are belonging to leaders in field of scientific interest during the last decades because of possibility of constructing numerous devices of opto-, photo-, acoustoelectronics and solar cells and modules [2][3][4][5]. However, there are also challenges the scientists are faced due to structural peculiarities of thin chalcogenide layers which are determining their electro-physical and optical characteristics.…”