Scanning tunneling microscopy observation of Bi-induced surface structures on the Si(100) surface

Naitoh, Masamichi; Takei, Motoki; Nishigaki, S.; Oishi, Nobuhiro; Shoji, Fumiya

doi:10.1016/s0039-6028(01)00860-3

Cited by 21 publications

(11 citation statements)

References 11 publications

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“…These kinds of replacements can also be found from previously reported Bi-adsorption results on Si(0 0 1) where Bi-dimers replace Si-dimers to form the Bi-dimer lines [11][12][13] and on Si (1 1 1) where Bi atoms replace Si-adatoms to form ffiffi ffi…”

Section: Resultssupporting

confidence: 70%

“…Then, if Bi reacts preferentially with one of these, Bi will form 1-D wire on Si(5 5 12). Also it has been reported that Bi forms a long 1-D row on Si(0 0 1) through such preferential reaction [10][11][12][13]. Differently from Si(0 0 1) with double domains, Si(5 5 12) has a single domain that the formed wire will not be interrupted by the crossed domains of the substrate.…”

Section: Introductionmentioning

confidence: 99%

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Atomic structure of Bi-dimer row selectively adsorbed on Si(5512)-2×1 surface

Cho¹,

Seo²

2004

Surface Science

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Section: Resultssupporting

confidence: 70%

Section: Introductionmentioning

confidence: 99%

Atomic structure of Bi-dimer row selectively adsorbed on Si(5512)-2×1 surface

Cho¹,

Seo²

2004

Surface Science

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“…Similarly, under certain growth conditions, well ordered self-organized Bi lines with more than 500 nm free of defects ͑kinks or vacancies͒ have been observed on the Si͑001͒ substrate. [3][4][5][6][7] In parallel with this, ab initio theoretical investigations have been done in order to clarify the structural and energetic properties of these 1D systems. [8][9][10][11] In general, due to its technological appeal, the silicon substrate has been employed for the majority of 1D-metal/ semiconductor systems.…”

Section: Introductionmentioning

confidence: 99%

Energetic stability, equilibrium geometry, and the electronic properties ofCa∕Si(111)surfaces

Miwa

2005

Phys. Rev. B

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We have performed an ab initio theoretical investigation of the energetic stability, equilibrium atomic geometry, and scanning tunneling microscope ͑STM͒ images of the Ca/ Si͑111͒ surface. We have considered the ͑3 ϫ 1͒, ͑3 ϫ 2͒, and ͑2 ϫ 1͒ structural models for Ca coverage of 1 / 3 ML, 1 / 6 ML, and 1 / 2 ML, respectively. Our total energy results indicate that the ͑3 ϫ 1͒ phase is not expected to occur, even for Ca-rich conditions. In the ͑3 ϫ 2͒ phase the Ca adatoms lie on the T4 sites along the surface trench separated by Si honeycomb chains. Similarly, in the ͑2 ϫ 1͒ phase the Ca adatoms are adsorbed on the T4 sites of the surface trench separated by Si zigzag chains. The equilibrium geometries and electronic charge transfers between Ca adatoms and Si͑111͒ surface for the ͑3 ϫ 2͒ and ͑2 ϫ 1͒ phases have been detailed. Our simulated STM images indicate that the higher-lying occupied states are located on the topmost Si atoms along the chains, while the empty states lie on the Ca adatoms, forming bright spots and stripes on the ͑3 ϫ 2͒ and ͑2 ϫ 1͒ surfaces. For occupied states, the simulated STM images confirm the experimentally verified 2ϫ modulation along the honeycomb chains in the Ca/ Si͑111͒-͑3 ϫ 2͒ surface, induced by attractive interactions between Ca adatoms and the nearest-neighbor Si atoms. Finally we have calculated the electronic band structures for the energetically stable ͑3 ϫ 2͒ and ͑2 ϫ 1͒ phases of the Ca/ Si͑111͒ surface, and compared ͑in detail͒ with the recent experimental findings.

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“…These reconstructions are not metallic, but one of the few examples of atomically perfect 1D systems on Si. [50][51][52][53] A good review on these structures is found in Ref. 54.…”

Section: Introductionmentioning

confidence: 99%

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Vanpoucke

2014

J. Phys.: Condens. Matter

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Atomic scale nanowires attract enormous interest in a wide range of fields. On the one hand, due to their quasi-one-dimensional nature, they can act as a experimental testbed for exotic physics: Peierls instability, charge density waves, and Luttinger liquid behavior. On the other hand, due to their small size, they are of interest for future device applications in the micro-electronics industry, but also for applications regarding molecular electronics. This versatile nature makes them interesting systems to produce and study, but their size and growth conditions push both experimental production and theoretical modeling to their limits. In this review, modeling of atomic scale nanowires on semiconductor surfaces is discussed focusing on the interplay between theory and experiment. The current state of modeling efforts on Pt-and Au-induced nanowires on Ge (001) is presented, indicating their similarities and differences. Recently discovered nanowire systems (Ir, Co, Sr) on the Ge(001) surface are also touched upon. The importance of scanning tunneling microscopy as a tool for direct comparison of theoretical and experimental data is shown, as is the power of density functional theory as an atomistic simulation approach. It becomes clear that complementary strengths of theoretical and experimental investigations are required for successful modeling of the atomistic nanowires, due to their complexity.

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Scanning tunneling microscopy observation of Bi-induced surface structures on the Si(100) surface

Cited by 21 publications

References 11 publications

Atomic structure of Bi-dimer row selectively adsorbed on Si(5512)-2×1 surface

Atomic structure of Bi-dimer row selectively adsorbed on Si(5512)-2×1 surface

Energetic stability, equilibrium geometry, and the electronic properties ofCa∕Si(111)surfaces

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

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