Scanning Tunneling Microscopy and Spectroscopy of Non-Doped, Hydrogen Terminated CVD Diamond

Cannaerts, Maarten; Nesládek, Miloš; Remeš, Z.; Haesendonck, Chris Van; Stals, L.M.

doi:10.1002/1521-396x(200009)181:1<77::aid-pssa77>3.0.co;2-l

Cited by 6 publications

(6 citation statements)

References 20 publications

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“…It was already shown that the surface of hydrogen terminated CVD films shows p-type conductivity [5], but that there can be local differences in the current-voltage (I -V) characteristics [10]. Some groups observe a rectifying behavior [9,14], which we attributed to a Schottky-like contact [9], other groups observe a more symmetrical I -V behavior [11,12]. Both types of curves can be seen on the same films in our previous work, but since the rectifying behavior is statistically observed more frequently, we assume that this is characteristic of the p-type hydrogen terminated CVD films.…”

Section: Introductioncontrasting

confidence: 93%

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Reversible Switching of the Surface Conductance of Hydrogenated CVD Diamond Films

Cannaerts

Nesládek

Haenen

et al. 2001

phys. stat. sol. (a)

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Chemical vapor deposited (CVD) diamond films have a controversial history regarding their surface electronic properties. Hydrogenation is known to induce a p-type conductive surface layer, which is not present on non-hydrogenated samples. The enhanced surface conductance can decrease significantly after annealing under high vacuum conditions at as low as 200 C (a temperature which is sufficiently low to ensure that the hydrogen termination remains intact). Although the hydrogen is necessary for the surface conductance, the surface can be made poorly conductive without removing the hydrogen termination. We have performed scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to better understand the origin of the enhanced surface conductance. Our STS experiments confirm that hydrogenation induces the appearance of a conductive surface layer, which can change considerably after high vacuum annealing. In this paper, we will discuss the conditions under which the surface conductivity can be restored. In particular we study the conductance changes during plasma hydrogenation and after exposing it to atmospheric conditions. Topographical STM scans confirm that the surface structure is not altered at low annealing temperatures.

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Section: Introductioncontrasting

confidence: 93%

“…3b: much lower current is flowing for the same applied bias. This is in accordance with previous STS results [9,10,23] and measurements examining the change in resistance with temperature [5,8,15,16]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Reversible Switching of the Surface Conductance of Hydrogenated CVD Diamond Films

Cannaerts

Nesládek

Haenen

et al. 2001

phys. stat. sol. (a)

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“…In previous research, microstructures and electrical properties of CVD diamond films that were investigated by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) were studied [6,7]. Current imaging tunneling spectroscopy (CITS) [8] was used to compare the structures and electrical properties of the doped diamond Figure 1(b), the grain size of this film was about 5-20 nm, and the roughness of this film was approximately 1.6 nm.…”

Section: Methodsmentioning

confidence: 99%

Study on the Microstructure and Electrical Properties of Boron and Sulfur Codoped Diamond Films Deposited Using Chemical Vapor Deposition

Zhang

Wang

et al. 2014

Journal of Nanomaterials

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The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S) codoped diamond films grown on high-temperature and high-pressure (HTHP) diamond and Si substrates were investigated using atom force microscopy (AFM), scanning tunneling microscopy (STM), secondary ion mass spectroscopy (SIMS), and current imaging tunneling spectroscopy (CITS) measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on HTHP diamond are composed of well-developed polycrystalline facets with an average size of 10–50 nm. SIMS analyses confirmed that sulfur was successfully introduced into diamond films, and a small amount of boron facilitated sulfur incorporation into diamond. Large tunneling currents were observed at some grain boundaries, and the emission character was better at the grain boundaries than that at the center of the crystal. The films grown on HTHP diamond substrates were much more perfect with higher quality than the films deposited on Si substrates. The localI-Vcharacteristics for films deposited on Si or HTHP diamond substrates indicate n-type conduction.

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“…In this study, we applied three scanning probe methods of STM [11], AFM and scanning probe field emission current (SPFEC) measurement [12] to boron-doped and undoped diamonds in order to clarify the relation between the conducting layer and electron emission 100nm 100nm properties. STM and current imaging tunnelling spectroscopy (CITS) were employed for nanoscale characterization [9].…”

Section: Introductionmentioning

confidence: 99%

Surface resistance and field emission current measurements on chemically vapour deposited polycrystalline diamond measured by scanning probe methods

Iseri¹,

Honda

Kim³

et al. 2003

J. Phys.: Condens. Matter

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Scanning tunnelling microscopy (STM) and current imaging tunnelling current spectroscopy (CITS) methods were performed on polycrystalline diamond films grown on silicon substrates grown by microwave plasma-enhanced chemical vapour deposition. Large tunnelling currents were observed at some grain boundaries and crystal surfaces with secondary grains. Following atomic force microscopy (AFM) measurements, we performed scanning probe contact current (SPCC) measurements to investigate the spatial variation of electrical resistance on the surface by using an AFM cantilever in contact mode. The conducting grain boundaries and facets were observed on both boron-doped and undoped samples. For microscale characterization of the field emission properties, we performed scanning probe field emission current (SPFEC) measurements. From the results of STM/CITS, AFM/SPCC and SPFEC, it is concluded that the specific grain boundaries and facets on polycrystalline diamonds work as initial points of electron emission and cause high field emission current through a conducting pass formed in the bulk.

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Scanning Tunneling Microscopy and Spectroscopy of Non-Doped, Hydrogen Terminated CVD Diamond

Cited by 6 publications

References 20 publications

Reversible Switching of the Surface Conductance of Hydrogenated CVD Diamond Films

Reversible Switching of the Surface Conductance of Hydrogenated CVD Diamond Films

Study on the Microstructure and Electrical Properties of Boron and Sulfur Codoped Diamond Films Deposited Using Chemical Vapor Deposition

Surface resistance and field emission current measurements on chemically vapour deposited polycrystalline diamond measured by scanning probe methods

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