Scanning Electron Microscopy

Reimer, Ludwig

doi:10.1007/978-3-540-38967-5

Cited by 814 publications

(252 citation statements)

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“…The SE are emitted to the outside of the sample (SEα) and within the plane of the sample (SEβ) [1]. Figure 1 illustrates the various types of SEs.…”

mentioning

confidence: 99%

“…The PEs, SEα and the SEβ affect, by modifying the film properties, the rate at which the irradiated sample area tends toward a steady state. Both PE and SEβ can cause radiation damage [2] and electron beam induced conductivity (EBIC) [1]. The discussed phenomena are relevant to sample charging, damage and to various implementations of hole-free phase plate (HFPP) [3,4].…”

mentioning

confidence: 99%

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Electron Beam-Induced Charging and Modifications of Thin Films

Malac

Beleggia²,

Rowan

et al. 2015

Microsc Microanal

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“…The SE are emitted to the outside of the sample (SEα) and within the plane of the sample (SEβ) [1]. Figure 1 illustrates the various types of SEs.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

Electron Beam-Induced Charging and Modifications of Thin Films

Malac

Beleggia²,

Rowan

et al. 2015

Microsc Microanal

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“…The layer widths measured from the micrograph are 90 nm and 109 nm for the AlAs and GaAs layers respectively. At the edges of the AlAs layers the image appears bright owing to the increased SE signal at abrupt changes in topography [11]. The bright ridge indicates the top of a step and is accompanied by a dark region next to it where SE emission at the bottom of the step is reduced.…”

Section: Methodsmentioning

confidence: 99%

Fracture properties of GaAs–AlAs superlattices studied by atomic force microscopy and scanning electron microscopy

Castell¹,

Howie

Ritchie

1998

Acta Materialia

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AbstractÐGaAs±AlAs superlattices with periodicities of up to 200 nm were cleaved to expose (110) faces. These surfaces were studied using high resolution scanning electron microscopy where the secondary electron images reveal contrast between the GaAs and AlAs layers and also indicate that the AlAs layers are topographically raised with respect to the GaAs. Atomic force microscopy of the same samples shows that the AlAs ridges can extend as far as 55 nm beyond the GaAs surface. Further secondary electron images of cross-sections of plastically deformed GaAs±AlAs superlattices reveal that the AlAs layers can undergo severe deformation whereas the GaAs layers fracture more readily. It is proposed that the AlAs protrusions on the (110) cleavage surface are due to the fracture behaviour of the superlattice as well as oxidation e ects. # 1998 Acta Metallurgica Inc.

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“…Scanning electron microscope (SEM) is one of the most powerful instruments that can image and analyse bulk specimens (Goldstein et al, 1992;Reimer, 1998). One of its important applications is image magnification through its hardware.…”

Section: Introductionmentioning

confidence: 99%

Lagrange time delay estimation for scanning electron microscope image magnification

Sim

Thong

Ting

et al. 2010

Journal of Microscopy

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Summary Interpolation techniques that are used for image magnification to obtain more useful details of the surface such as morphology and mechanical contrast usually rely on the signal information distributed around edges and areas of sharp changes and these signal information can also be used to predict missing details from the sample image. However, many of these interpolation methods tend to smooth or blur out image details around the edges. In the present study, a Lagrange time delay estimation interpolator method is proposed and this method only requires a small filter order and has no noticeable estimation bias. Comparing results with the original scanning electron microscope magnification and results of various other interpolation methods, the Lagrange time delay estimation interpolator is found to be more efficient, more robust and easier to execute.

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Scanning Electron Microscopy

Cited by 814 publications

References 0 publications

Electron Beam-Induced Charging and Modifications of Thin Films

Electron Beam-Induced Charging and Modifications of Thin Films

Fracture properties of GaAs–AlAs superlattices studied by atomic force microscopy and scanning electron microscopy

Lagrange time delay estimation for scanning electron microscope image magnification

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