Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

Shinohara, Kazuhiko; Regan, D.; Tang, Yan; Corrion, A.; Brown, David F.; Wong, Joel; Robinson, John F.; Fung, Helen; Schmitz, A.; Oh, Thomas C.; Kim, Samuel Jungjin; Chen, Peter S.; Nagele, Robert G.; Margomenos, A.; Micovic, M.

doi:10.1109/ted.2013.2268160

Cited by 409 publications

(188 citation statements)

References 25 publications

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“…[1][2][3][4][5][6] It was demonstrated by many groups that GaN-HEMTs with an insulated gate (IG) structure, apart from being necessary for achieving normally off operation, exhibit important advantages over Schottkygate-based GaN-HEMTs such as lower gate leakage current, higher breakdown voltage, better thermal stability of the gate and less current collapse. [6][7][8][9][10] In order to obtain a good IG structure, suitable insulating materials such as Al 2 O 3 , SiO 2 , and SiN ensuring a large band offset and high permittivity are widely applied.…”

Section: Introductionmentioning

confidence: 99%

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Matys

Stoklas

Kuzmı́k

et al. 2016

Journal of Applied Physics

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Articles you may be interested inWe performed, for the first time, quantitative characterization of electron capture cross sections r of the interface states at dielectric/III-N heterojunction interfaces. We developed a new method, which is based on the photo-assisted capacitance-voltage measurements using photon energies below the semiconductor band gap. The analysis was carried out for AlGaN/GaN metal-insulatorsemiconductor heterojunction (MISH) structures with Al 2 O 3 , SiO 2 , or SiN films as insulator deposited on the AlGaN layers with Al content (x) varying over a wide range of values. Additionally, we also investigated an Al 2 O 3 /InAlN/GaN MISH structure. Prior to insulator deposition, the AlGaN and InAlN surfaces were subjected to different treatments. We found that r for all these structures lies in the range between 5 Â 10 À19 and 10 À16 cm 2 . Furthermore, we revealed that r for dielectric/ Al x Ga 1Àx N interfaces increases with increasing x. We showed that both the multiphonon-emission and cascade processes can explain the obtained results. Published by AIP Publishing.

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Section: Introductionmentioning

confidence: 99%

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Matys

Stoklas

Kuzmı́k

et al. 2016

Journal of Applied Physics

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“…[1][2][3][4][5][6][7][8][9][10] However, achieving normally-off or enhancement mode transistors with the positive threshold voltage (V th ), which exhibit good performance, still remains a major challenge. 2 The key feature of the precise tuning of V th in GaN-based MISHEMTs is the control of the positive fixed charge (Q f ) at the insulator/III-N interfaces.…”

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confidence: 99%

Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Matys

Stoklas

Blaho

et al. 2017

Applied Physics Letters

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The key feature for the precise tuning of Vth in GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors is the control of the positive fixed charge (Qf) at the insulator/III-N interfaces, whose amount is often comparable to the negative surface polarization charge (Qpol−). In order to clarify the origin of Qf, we carried out a comprehensive capacitance-voltage (C-V) characterization of SiO2/AlxGa1–xN/GaN and SiN/AlxGa1–xN/GaN structures with Al composition (x) varying from 0.15 to 0.4. For both types of structures, we observed a significant Vth shift in C-V curves towards the positive gate voltage with increasing x. On the contrary, the Schottky gate structures exhibited Vth shift towards the more negative biases. From the numerical simulations of C-V curves using the Poisson's equation supported by the analytical calculations of Vth, we showed that the Vth shift in the examined MIS structures is due to a significant decrease in the positive Qf with rising x. Finally, we examined this result with respect to various hypotheses developed in the literature to explain the origin of the positive Qf at insulator/III-N interfaces.

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“…In addition, TMIC offers the advantage of higher functionality, lower system costs and smaller chip size. Currently, GaN highelectron-mobility-transistors (HEMTs) on semi-insulating (SI) SiC have achieved a cutoff frequency (fT) of 450 GHz through the intensive progress in GaN HEMTs scaling technologies toward THz operation; applying such devices in TMIC technology will yield systems operating in multiple frequencies of their fT [6]. However, SiC substrates are expensive and have limited availability in large diameters required for low cost manufacturing.…”

Section: Introductionmentioning

confidence: 99%

“…However, RF substrate coupling effects are the main cause of performance degradation when considering LR Si as a substrate [7]. Therefore substrate loss suppression is a crucial step towards the industrialization of high-quality interconnects and passive elements in GaN-on-LR Si technology.…”

Section: Introductionmentioning

confidence: 99%

Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC

Benakaprasad

Eblabla

et al. 2016

2016 46th European Microwave Conference (EuMC)

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Abstract-In this paper we demonstrate a THz microstrip stack antenna on GaN-on-low resistivity silicon substrates (ρ < 40 Ω.cm). To reduce losses caused by the substrate and to enhance performance of the integrated antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold in addition to a layer of benzocyclobutene (BCB). A second circular patch is elevated in air using gold posts, making this design a stack configuration. The demonstrated antenna shows a measured resonance frequency in agreement with the modeling at 0.27 THz and a measured S11 as low as -18 dB was obtained. A directivity, gain and radiation efficiency of 8.3 dB, 3.4 dB, and 32% respectively was exhibited from the 3D EM model. To the authors' knowledge, this is the first demonstrated THz integrated microstrip stack antenna for TMIC (THz Monolithic Integrated Circuits) technology; the developed technology is suitable for high performance III-V material on low resistivity/high dielectric substrates.

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Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

Cited by 409 publications

References 25 publications

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC

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