Scaling law of anomalous Hall effect in Fe/Cu bilayers

Abstract

The scaling of anomalous Hall resistivity on the longitudinal resistivity has been intensively studied in the different magnetic systems, including multilayers and granular films, to examine which mechanism, skew scattering or side-jump, dominates. The basis of the scaling law is that both the resistivities are due to the electron scattering at the imperfections in the materials. By studying of anomalous Hall effect (AHE) in the simple Fe/Cu bilayers, we demonstrate that the measured anomalous Hall effect should not follow the scaling laws derived from skew scattering or side-jump mechanism due to the short-circuit and shunting effects of the non-magnetic layers.

Anomalous Hall effect in granular ferromagnetic metals and effects of weak localization

“…One could say that for granular systems, the scaling relation (3.8) with the exponent γ = 0 holds, independent of the dominant mechanism of AHE. In this context, we note that considerable deviations from the scaling law (3.8) have previously been observed experimentally in several types of heterostructure systems 11,12 , in which the longitudinal resistivity was also governed by the structural disorder (such as transparency of the interfaces) rather than by the intrinsic disorder of the ferromagnetic material.…”

“…These scaling relations were observed experimentally 10 in homogeneous systems. At the same time, for some heterostructure systems 11,12 considerable deviations from this scaling law were reported.…”

Rashba-Edelstein Magnetoresistance in Metallic Heterostructures

“…Thus, with these assumptions, the Bi/Ag/CoFeB trilayer can be modeled as four independent resistors in parallel: the Bi, Ag, CoFeB, and Bi/Ag interface layers. By taking into account the shunting and short-circuit effects [33, 48,49], we obtain…”

Anomalous Hall effect in Co40Fe40B20/SiO2/Si structures

“…A C C E P T E D ACCEPTED MANUSCRIPT -4 -mechanisms in Fe/Cu bilayers [16]. Such unconventional phenomena arise from the carriers transporting between Fe and Gd (Cu) layers [15,16] where R AH =4πχR s , χ is magnetic susceptibility, R s is anomalous Hall coefficient and R 0 is the ordinary Hall coefficient of Si.…”

“…Such unconventional phenomena arise from the carriers transporting between Fe and Gd (Cu) layers [15,16] where R AH =4πχR s , χ is magnetic susceptibility, R s is anomalous Hall coefficient and R 0 is the ordinary Hall coefficient of Si. With the increase of temperature, the magnitude of R AH I CoFeB drops rapidly, however, which is still larger than R 0 I Si .…”