Route towards efficient magnetization reversal driven by voltage control of magnetic anisotropy

Abstract

The voltage controlled magnetic anisotropy (VCMA) becomes a subject of major interest for spintronics due to its promising potential outcome: fast magnetization manipulation in magnetoresistive random access memories with enhanced storage density and very low power consumption. Using a macrospin approach, we carried out a thorough analysis of the role of the VCMA on the magnetization dynamics of nanostructures with out-of-plane magnetic anisotropy. Diagrams of the magnetization switching have been computed depending on the material and experiment parameters (surface anisotropy, Gilbert damping, duration/amplitude of electric and magnetic field pulses) thus allowing predictive sets of parameters for optimum switching experiments. Two characteristic times of the trajectory of the magnetization were analyzed analytically and numerically setting a lower limit for the duration of the pulses. An interesting switching regime has been identified where the precessional reversal of magnetization does not depend on the voltage pulse duration. This represents a promising path for the magnetization control by VCMA with enhanced versatility.

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

“…To achieve deterministic switching, the voltage pulse should be turned off after the magnetization completes half precession cycle. 209 The voltage pulse width (t PW ) can be given by 209,214,217…”

“…218 They reported a long tolerance of few ns where WER values are in the range of 2 Â 10 À5 -10 À3 . In 2021, One et al 217 studied VCMA switching using detailed macro-spin simulation. As per their analysis, important switching behavior parameters are the damping constant and the anisotropy field modulation (p).…”

Micromagnetic Design of Skyrmionic Materials and Chiral Magnetic Configurations in Patterned Nanostructures for Neuromorphic and Qubit Applications

“…The strategy of skyrmion manipulation by electric fields is one of the most energetically efficient options. It is based on the electric field control of the perpendicular magnetic anisotropy [36]. In Figure 25a, we zoom on a skyrmionic zone within a ground states DMI-PMA-Q diagram.…”

Heavily Damped Precessional Switching with Very Low Write-Error Rate in Elliptical-Cylinder Magnetic Tunnel Junctions

“…We have previously proposed a writing scheme based on heavily damped precession of the magnetization, where the WER is less sensitive to the pulse width [20][21][22][23]. Even when the voltage is applied for over half a precession period, the magnetization is kept near the opposite direction of the initial state, so the pulse width does not need to be controlled precisely.…”