Room-temperature infrared photoluminescence in GaN doped with various impurities

Spectroscopy of defects in neutron irradiated ammono-thermal GaN by combining photoionization, photoluminescence and positron annihilation techniques

“…Here n i = 2 × 10 −10 cm -3 is the intrinsic carrier concentration for GaN materials [52], k B is the Boltz mann constant, h is the Planck constant, ρ a is the surface density of photons ascribed to the unit frequency ν within the absorption spectrum for the spectral range ∆(hν), inherent to the dedicated trap of the concentration N d , and n ex∆(hν) is the excess carrier density generated through photoionization in the definite spectral range ∆(hν), τ PL ∆(hν) is the PL relaxation time. The relations between the photoionization and photoluminescence spectra (Fig.…”

Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation

“…To identify the origin of different PIL components, the predominant spectral components have been correlated with pulsed photo-ionization spectra (PPIS), measured on satellite mesa structures of the same material. The PPIS technique and its application for defect spectroscopy in GaN materials is described in recent our articles [5,6,7,8]. The recorded and simulated PPIS spectral steps, ascribed to the definite defects responsible for the PIL spectral components, are illustrated within inset 1 for Figure 5.…”

“…The recorded and simulated PPIS spectral steps, ascribed to the definite defects responsible for the PIL spectral components, are illustrated within inset 1 for Figure 5. Based on these PPIS components, the luminescence bands (inset 2 for Figure 5) were consequently simulated [5,6] by using the van Roosbroeck–Shockley (vRS) approach [9,10] to correlate the conversion from absorption (PPIS) to Stokes shifted emission (PIL). The latter fitted luminescence components, which peaked at 2.57 eV, 2.31 eV and 2.10 eV, were chosen to deduce an evolution of the PIL spectral components.…”