Room Temperature Ferromagnetism in Novel Diluted Magnetic Semiconductor Cd1-xMnxGeP2

Medvedkin, G. A.; Ishibashi, Takayuki; Nishi, Takao; Hayata, Koji; Hasegawa, Yoichi; Sato, K.

doi:10.1143/jjap.39.l949

Cited by 369 publications

(185 citation statements)

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“…Consequently, these compounds have found use in a range of semiconductor applications, such as non-linear optical devices 2,3 , photodiodes 4,5 , spintronic devices 6,7 , and more recently, thin film intermediate band solar cells 8 . Copper-iron-sulfide chalcopyrite (CuFeS 2 ) is also commercially the most important copper ore as it accounts for the majority of copper reserves.…”

Section: Introductionmentioning

confidence: 99%

A hybrid-exchange density functional study of the bonding and electronic structure in bulk CuFeS2

Martínez-Casado

Chen

Mallia

et al. 2016

The Journal of Chemical Physics

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The geometric, electronic and magnetic properties of bulk chalcopyrite CuFeS 2 have been investigated using hybrid-exchange density functional theory calculations. The results are compared with available theoretical and experimental data. The theoretical description of the bonding and electronic structure in CuFeS 2 is analyzed in detail and compared to those computed for chalcocite (CuS 2 ) and greigite (Fe 3 S 4 ).In particular, the behavior of the 3d electrons of Fe 3+ are discussed in terms of the Hubbard-Anderson model in the strongly correlated regime and found to be similarly described in both materials by an on-site Coulomb repulsion (U ) of ∼8.9 eV and a transfer integral (t) of ∼0.3 eV. a) vincent.chen08@imperial.ac.uk

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Section: Introductionmentioning

confidence: 99%

A hybrid-exchange density functional study of the bonding and electronic structure in bulk CuFeS2

Martínez-Casado

Chen

Mallia

et al. 2016

The Journal of Chemical Physics

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“…The study of dilute magnetic semiconductors started in late 1960s [26,27] resulted in various exciting findings. Among the most extensively studied ferromagnetic semiconductors were Eu-Chalcogenides (e.g., EuSe, EuS, EuO) and Cr-Chalcogenide spinels (e.g., CdCr 2 Se 4 , CdCr 2 S 4 ).…”

Section: A Journey Of Thousand Miles Begins With a Single Step!mentioning

confidence: 99%

“…The next generation of DMS began in early 1980s with the appearance of dilute magnetic semiconductors based on II-VI compounds together with those based on IV-VI compounds [26]. The materials of the type (e.g.…”

Section: A Journey Of Thousand Miles Begins With a Single Step!mentioning

confidence: 99%

“…This phenomenon makes this type of DMS relatively easy to make in bulk and thin epitaxial layers. Many fundamental studies were done on these systems but not much application could be realized except for optical isolators [26]. The magnetic interactions in these DMS is dominated by antiferromagnetic coupling of Mn spins, which results in paramagnetic, antiferromagnetic or spin glass behaviour [26].…”

Section: A Journey Of Thousand Miles Begins With a Single Step!mentioning

confidence: 99%

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Resonant soft X-ray emission spectroscopy of vanadium oxides andrelated compounds

Schmitt

2004

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“…5, 22 We consider here generic parabolic n-type ferromagnetic QWs, though one expects to observe similar effects in coupled p-type ferromagnetic QWs. Several suitable n-type ferromagnetic semiconductors have been reported: 1 HgCr 2 Se 4 , 23 CdCr 2 Se 4 , 24 CdMnGeP 2 , 25 or most promising ZnO and GaMnN; 22,27 the latter two are believed to exhibit room temperature ͑RT͒ ferromagnetism. To be specific we perform our numerical simulations for GaMnNbased structures.…”

mentioning

confidence: 99%

Resonant tunneling magnetoresistance in coupled quantum wells

Ertler

Fabian

2006

Applied Physics Letters

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A three barrier resonant tunneling structure in which the two quantum wells are formed by a magnetic semiconductor is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases. The requirements for large magnetocurrent are spin resolved resonance levels as well as asymmetry ͑spatial or magnetic͒ of the coupled quantum wells. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2402878͔Semiconductor spintronics offers additional functionalities to the existing electronics technology by combining charge and spin properties of the current carriers. 1 Spin dependent resonant tunneling in double barrier heterostructures has been investigated both experimentally and theoretically with a magnetic quantum well ͑QW͒ made of semimetallic ErAs ͑Refs. 2 and 3͒ or dilute magnetic semiconductors ͑DMSs͒ such as GaMnAs ͑Refs. 4-9͒ or ZnMnSe ͑Refs. 10 and 11͒. Such diodes have been used as spin filters or spin detectors and effective injection of spin-polarized electrons into semiconductors has been demonstrated by employing interband tunneling devices based on GaMnSb. 12,13 A theoretical investigation of resonant tunneling through a nonmagnetic double barrier structure, e.g., AlAs/ GaAs/ AlAs, sandwiched between two bulk ferromagnetic DMSs, e.g., GaMnAs, shows a tremendous enhancement of the tunneling magnetoresistance ͑TMR͒ for low voltages if the thickness of the QW is properly tuned. 14 The effect has been demonstrated to be as high as 10 000% for generic parabolic bands and when including a more realistic kp band structure model still very high TMRs of about 800% have been obtained. 14 Such structures have already been grown and studied experimentally. 4,15,16 Here we propose to use magnetic resonant tunneling diodes ͑RTDs͒ comprising coupled magnetic QWs and three nonmagnetic barriers, as spintronic devices offering large magnetocurrents ͑MCs͒. Corresponding nonmagnetic three barrier structures have been experimentally studied, [17][18][19][20] while electric field domain formation in magnetic multiple QWs was theoretically investigated in Ref. 21. The magnetic three barrier structure allows to establish parallel ͑P͒ and antiparallel ͑AP͒ magnetization configurations and to observe MC. The QWs are assumed to be made of ferromagnetic semiconductors. 5,22 We consider here generic parabolic n-type ferromagnetic QWs, though one expects to observe similar effects in coupled p-type ferromagnetic QWs. Several suitable n-type ferromagnetic semiconductors have been reported: 1 HgCr 2 Se 4 , 23 CdCr 2 Se 4 , 24 CdMnGeP 2 , 25 or most promising ZnO and GaMnN; 22,27 the latter two are believed to exhibit room temperature ͑RT͒ ferromagnetism. To be specific we perform our numerical simulations for GaMnNbased structures.However, it is still controversial if the reported RT ferromagnetism in transition metal doped GaN and ZnO is due to non-resolved precipitates or n...

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Room Temperature Ferromagnetism in Novel Diluted Magnetic Semiconductor Cd_1-xMn_xGeP₂

Cited by 369 publications

References 6 publications

A hybrid-exchange density functional study of the bonding and electronic structure in bulk CuFeS2

A hybrid-exchange density functional study of the bonding and electronic structure in bulk CuFeS2

Resonant soft X-ray emission spectroscopy of vanadium oxides andrelated compounds

Resonant tunneling magnetoresistance in coupled quantum wells

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