Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m

Choquette, Kent D.; Klem, John F.; Fischer, Arthur J.; Blum, O.; Allerman, A.A.; Fritz, I. J.; Kurtz, S. R.; Breiland, William G.; Sieg, R. M.; Geib, K.M.; Scott, Jeffrey W.; Naone, R.L.

doi:10.1049/el:20000928

Cited by 255 publications

(102 citation statements)

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“…Only recently, MOCVD-grown InGaAsN QW lasers, 3-7 at ϭ1300 nm, have demonstrated comparable performances with the MBEgrown InGaAsN QW lasers. [8][9][10][11][12] As shown in our earlier studies, 3 tensile-strained buffer layers ͑InGaPϩGaAsP͒ are crucial for achieving highly strained InGaAs͑N͒ QW lasers grown on thick, highAl-content ͑75%-85%͒ AlGaAs lower cladding layers. In the present work, we report very low threshold (J th )-and transparency (J th )-current-density, strain-compensated In 0.4 Ga 0.6 As 0.995 N 0.005 QW lasers with high current injection efficiency ( inj ) by utilizing strain compensation from GaAsP tensile-strained barriers and a thin GaAsP tensilestrained buffer layer.…”

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“…[1][2][3][4][5][6][7][8][9][10][11][12] Less temperature sensitivity in InGaAsN QW lasers, at ϭ1300 nm, has also been demonstrated in many of the published results. [1][2][3][4][5][6][7][8][9][10][11][12] Although the area of temperature sensitivity in InGaAsN QW lasers is still under extensive investigation, 13,14 promising results of both low threshold-current-density (J th ) and high T 0 values ͓1/T 0 ϭ(1/J th )dJ th /dT͔ have been demonstrated. 3,6,12 Recently, efforts to achieve high performance InGaAsN QW lasers by metalorganic chemical vapor deposition ͑MOCVD͒ 3-7 have been pursued.…”

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“…To the best of our knowledge, these data represent the lowest threshold-and transparencycurrent densities reported for InGaAsN QW lasers in the wavelength regime of 1.28 -1.32 m as shown in Table I. [1][2][3][4][5][6][7][8][9][10][11][12] The external differential quantum efficiency ( d ) of the InGaAsN QW lasers, as shown in Fig. 3, is as high as 57% for devices with cavity lengths of 720 m. The lower d for the longer cavity devices is attributed to the relatively large internal loss (␣ i ϭ13 cm 1 ) for these unoptimized structures.…”

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Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

Tansu¹,

Kirsch²,

Mawst

2002

Applied Physics Letters

160

130

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Metalorganic chemical vapor deposition-grown In 0.4 Ga 0.6 As 0.995 N 0.005 quantum well ͑QW͒ lasers have been realized, at an emission wavelength of 1.295 m, with threshold and transparency current densities as low as 211 A/cm 2 ͑for Lϭ2000 m͒ and 75 A/cm 2 , respectively. The utilization of a tensile-strained GaAs 0.67 P 0.33 buffer layer and GaAs 0.85 P 0.15 barrier layers allows a highly-compressively-strained In 0.4 Ga 0.6 As 0.995 N 0.005 QW to be grown on a high-Al-content lower cladding layer, resulting in devices with high current injection efficiency ( inj ϳ97%͒. © 2002 American Institute of Physics. ͓DOI: 10.1063/1.1511290͔The dilute-nitride quantum well ͑QW͒ on GaAs substrate, to achieve 1300-nm wavelength emission, has been a very promising choice active region in realizing highperformance long-wavelength GaAs-based vertical cavity surface emitting lasers ͑VCSELs͒. 1-12 Less temperature sensitivity in InGaAsN QW lasers, at ϭ1300 nm, has also been demonstrated in many of the published results. [1][2][3][4][5][6][7][8][9][10][11][12] Although the area of temperature sensitivity in InGaAsN QW lasers is still under extensive investigation, 13,14 promising results of both low threshold-current-density (J th ) and high T 0 values ͓1/T 0 ϭ(1/J th )dJ th /dT͔ have been demonstrated. 3,6,12 Recently, efforts to achieve high performance InGaAsN QW lasers by metalorganic chemical vapor deposition ͑MOCVD͒ 3-7 have been pursued. The advantage of the MOCVD-grown InGaAsN QW lasers is the ease in growing high quality AlAs/GaAs distributed Bragg reflectors by MOCVD, compared to molecular beam epitaxy ͑MBE͒ techniques, for realizing low-cost VCSELs. Only recently, MOCVD-grown InGaAsN QW lasers, 3-7 at ϭ1300 nm, have demonstrated comparable performances with the MBEgrown InGaAsN QW lasers. [8][9][10][11][12] As shown in our earlier studies, 3 tensile-strained buffer layers ͑InGaPϩGaAsP͒ are crucial for achieving highly strained InGaAs͑N͒ QW lasers grown on thick, highAl-content ͑75%-85%͒ AlGaAs lower cladding layers. In the present work, we report very low threshold (J th )-and transparency (J th )-current-density, strain-compensated In 0.4 Ga 0.6 As 0.995 N 0.005 QW lasers with high current injection efficiency ( inj ) by utilizing strain compensation from GaAsP tensile-strained barriers and a thin GaAsP tensilestrained buffer layer.The lasers structures utilized here were all grown by low-pressure MOCVD. Trimethylgallium, trimethylaluminium, and trimethylindium are used as the group III sources and AsH 3 , PH 3 , and U-dimethylhydrazine ͑U-DMHy͒ are used as the group V sources. The dopant sources are SiH 4 and dielthylzinc for the n-and p-dopants, respectively. The laser structure, shown in Fig. 1, utilizes min. This annealing condition does not represent the optimized annealing temperature and duration for the InGaAsN QW, yet this condition is sufficient for achieving strong luminescence from the QW. The InGaAsN QW is surrounded by tensile-strain barriers of GaAs 0.85 P 0.15 (⌬a/aϭ0.6%͒, which are spaced 100 Å on ...

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Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

Tansu¹,

Kirsch²,

Mawst

2002

Applied Physics Letters

160

130

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“…The market of VCSELs has been growing up rapidly and they are now key devices in local area networks based on multi-mode optical fibers. Also, long wavelength VCSELs are currently attracting much interest for use in single-mode fiber metropolitan area and wide area networks [2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19].…”

Section: Introductionmentioning

confidence: 99%

VCSEL photonics -advances and new challenges-

Koyama

2009

IEICE Electron. Express

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Abstract:We had the 30-year anniversary since a VCSEL was invented by Kenichi Iga, Tokyo Institute of Technology. We have seen various applications including datacom, sensors, optical interconnects, spectroscopy, optical storages, printers, laser displays, laser radar, atomic clock, optical signal processing and so on. A lot of unique features have been proven, low power consumption, a wafer level testing and so on. In this paper, the brief history and our recent research activities on VCSEL photonics will be reviewed. We present the wavelength engineering of VCSEL arrays for use in high speed short-reach systems, which includes the wavelength integration and wavelength control. The joint research project on ultra-parallel optical links based on VCSEL technologies will be introduced for high speed LANs of 100 Gbps or higher. The small footprint of VCSELs allows us to form a densely packed VCSEL array both in space and in wavelength. The wavelength engineering of VCSELs may open up ultra-high capacity networking. Highly controlled multi-wavelength VCSEL array and novel multi-wavelength combiners are developed toward Terabit/s-class ultrahigh capacity parallel optical links. In addition, the MEMS-based VCSEL technology enables widely tunable operations. We demonstrated an "athermal VCSEL" with avoiding temperature controllers for uncooled WDM applications. In addition, new functions on VCSELs for optical signal processing are addressed. We present an optical nonlinear phase shifter based on a VCSEL saturable absorber and the tunable optical equalization function.Also, highly reflective periodic mirrors commonly used in VCSELs enables us to manipulate the speed of light. This new scheme provides us ultra-compact intensity modulators, optical switches and so on for VCSEL-based photonic integration. Also, this paper explores plasmonic VCSELs. Vol.6, No.11, 651-672 nol. Lett., vol. 11, no. 8, pp. 946-948, Aug. 1999 Commun., vol. 208, pp. 173-182, July 2002. [28] H. Kawaguchi, Y. Yamayoshi, and K. Tamura, "All-optical format conversion using an ultrafast polarization bistable vertical-cavity surfaceemitting laser," Proc. CLEO 2000, CWU2, pp. 379-380, 2000. namic behavior of an all-optical inverter using transverse-mode switching in 1.55-μm vertical-cavity surface-emitting lasers," IEEE Photon.

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“…Vertical cavity surface emitting lasers (VCSELs) promise stable wavelength, economies of scale for arrays, fabrication and testing, and inexpensive, lens-free packaging with optical fibre. Although VCSELs previously have been demonstrated on InP with quaternary, distributed Bragg reflector (DBR) mirrors [1,2], it has been difficult to grow lasers at long wavelengths using inexpensive GaAs substrates, with electrically injected VCSELs reported only at 1300 nm [3] and 1460 nm [4]. GaAs-based VCSELs offer additional advantages, including higher thermal and electrical conductivity using Al(Ga)As= GaAs DBRs, as well as selective wet oxidation of AlGaAs for electrical and optical confinement.…”

Section: Introductionmentioning

confidence: 99%