Room-temperature antiferromagnetism in CuMnAs

Máca, F.; Mašek, J.; Stelmakhovych, O.; Martí, X.; Reichlová, Helena; Uhlířová, Klára; Béran, P.; Wadley, P.; Novák, V.; Jungwirth, T.

doi:10.1016/j.jmmm.2011.12.017

Cited by 62 publications

(66 citation statements)

References 30 publications

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“…The measured positive Hall coefficient of 6 Â 10 À 8 O cm T À 1 interpreted in a single-carrier model would give a carrier density of 1.1 Â 10 22 cm À 3 . However, as discussed in Maca et al 20 for the orthorhombic bulk CuMnAs and confirmed by our calculations for the tetragonal CuMnAs presented below, the compound's electronic structure is at the transition from a semiconductor to a semimetal. The nature of electronic states near the Fermi energy may therefore be sensitive to relatively small changes of intrinsic and extrinsic parameters of the CuMnAs films.…”

Section: Resultssupporting

confidence: 87%

“…Group Ib transition metal elements may represent the solution to this problem: NaZnAs and AgZnAs are known to be twin compounds with identical crystal structure and lattice constants, and CuZnAs is also very similar 17 . This has motivated our interest in CuMnAs as a suitable I-Mn-V AFM compound for spintronics 20 . The bulk equilibrium phase of CuMnAs displays room-temperature AFM ordering 26 , as confirmed in our recent study of chemically synthesized bulk samples 20 .…”

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confidence: 99%

“…This has motivated our interest in CuMnAs as a suitable I-Mn-V AFM compound for spintronics 20 . The bulk equilibrium phase of CuMnAs displays room-temperature AFM ordering 26 , as confirmed in our recent study of chemically synthesized bulk samples 20 . However, the orthorhombic crystal structure (Fig.…”

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confidence: 99%

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Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

et al. 2013

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Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new hightemperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Néel temperature. Combined with our demonstration of room-temperatureexchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.

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Section: Resultssupporting

confidence: 87%

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Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

et al. 2013

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“…In contrast to theoretical studies, the experimental results of o-CuMnAs is relatively rare. A study on o-CuMnAs powder in the literature only indicates that there is an AFM transition above room temperature 41 . Because of a lack of single crystals, whether this material could exhibit the behaviors of Dirac fermions is still unknown.…”

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confidence: 99%

Massive fermions with low mobility in antiferromagnet orthorhombic CuMnAs single crystals

Zhang¹,

Sun²,

Lei³

2017

Phys. Rev. B

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We report the physical properties of orthorhombic o-CuMnAs single crystal, which is predicted to be a topological Dirac semimetal with magnetic ground state and inversion symmetry broken. o-CuMnAs exhibits an antiferromagnetic transition with TN ∼ 312 K. Further characterizations of magnetic properties suggest that the AFM order may be canted with the spin orientation in the bc plane. Small isotropic MR and linearly field-dependent Hall resistivity with positive slope indicate that single hole-type carries with high density and low mobility dominate the transport properties of o-CuMnAs. Furthermore, the result of low-temperature heat capacity shows that the effective mass of carriers is much larger than those in typical topological semimetals. These results imply that the carriers in o-CuMnAs exhibit remarkably different features from those of Dirac fermions predicted in theory.

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“…The synthesis of semiconductors with high-temperature ferromagnet (FM) ordering of spins, which would simultaneously enable the conventional tunability of electronic properties and spintronic functionalities, remains a significant challenge 8 . On the other hand, robust AFM ordering occurs much more frequently in nature than FM ordering, particularly in conjunction with semiconducting electronic structure 9,10 . Recent studies have identified several candidate AFM semiconductor materials, ranging from AFM counterparts of common zinc-blende or half-Heusler compound semiconductors [11][12][13][14] to perovskite semiconductor-AFM oxides [15][16][17][18][19] .…”

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Anisotropic magnetoresistance in an antiferromagnetic semiconductor

et al. 2014

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Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental observation of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr 2 IrO 4 . Based on ab initio calculations, we associate the origin of the phenomenon with large anisotropies in the relativistic electronic structure. The antiferromagnet film is exchange coupled to a ferromagnet, which allows us to reorient the antiferromagnet spin-axis in applied magnetic fields via the exchange spring effect. We demonstrate that the semiconducting nature of our AFM electrode allows us to perform anisotropic magnetoresistance measurements in the currentperpendicular-to-plane geometry without introducing a tunnel barrier into the stack. Temperature-dependent measurements of the resistance and anisotropic magnetoresistance highlight the large, entangled tunabilities of the ordinary charge and spin-dependent transport in a spintronic device utilizing the antiferromagnet semiconductor.

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Room-temperature antiferromagnetism in CuMnAs

Cited by 62 publications

References 30 publications

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Massive fermions with low mobility in antiferromagnet orthorhombic CuMnAs single crystals

Anisotropic magnetoresistance in an antiferromagnetic semiconductor

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