2008
DOI: 10.1103/physrevlett.100.206803
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Abstract: AbstractSub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with I on /I off ratio up to 10 6 and on-state current density as high as ~2000μA/μm. We estimated carrier mobility ~200cm 2 /Vs and scattering mean free path ~10nm in sub-10nm GNRs. Scattering mechanisms by edges, acoustic phonon and defects are discussed. The sub-10nm GNRFETs are comparable to small diameter (d≤~1.2nm) carbon nanotube FETs…

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