Role of secondary electrons and metastable atoms in the electron-beam activation of argon-silane mixtures

Sukhinin, G. I.; Fedoseev, A. V.; Khmel, S. Ya.

doi:10.1134/s1063780x08010078

Cited by 11 publications

(11 citation statements)

References 23 publications

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“…The model included calculation of the space-energy distribution function of primary and secondary electrons from the Boltzmann equation, hydrodynamic description of the formation of metastable argon atoms for subsequent calculation of monosilane molecule dissociation in monosilane-argon mixture. The model was used to mathematically calculate the process of dissociation in a homogeneous monosilane-argon mixture activated by electron beam [8,10,11]. The energy and current of the electron beam, its diameter, and the gas density and composition were close to the experimental conditions.…”

Section: Resultsmentioning

confidence: 99%

“…A comprehensive mathematical model [8] was developed for clarifying the role of fast secondary electrons and metastable atoms of argon in the processes of silicon film deposition from monosilaneargon mixture by the gas-jet electron beam plasma chemical vapor deposition method. The model included calculation of the space-energy distribution function of primary and secondary electrons from the Boltzmann equation, hydrodynamic description of the formation of metastable argon atoms for subsequent calculation of monosilane molecule dissociation in monosilane-argon mixture.…”

Section: Resultsmentioning

confidence: 99%

“…Vice versa, when the initial mixture is diluted with helium or hydrogen, the growth rate of the silicon film decreases, meanwhile, the growth rate decreases stronger for hydrogen. As is known, there are three groups of electrons in electron-beam plasma, namely, primary, fast secondary, and plasma electrons [8]. The primary electrons are beam electrons, their number is small, and they possess the maximum energy.…”

Section: Methodsmentioning

confidence: 99%

“…The plasma electrons are thermolyzed low-energy electrons, their number is even greater than that of fast secondary electrons, but only few of them are capable of ionization, dissociation, etc., according to the distribution function. It is assumed that it is fast secondary electrons that are governing in the gas activation processes [8].…”

Section: Methodsmentioning

confidence: 99%

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Effect of diluent gas on silicon film deposition from a free jet of monosilane-diluent mixture activated by electron-beam plasma

Khmel

2012

J. Engin. Thermophys.

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Thin silicon films were synthesized by the gas-jet electron beam plasma chemical vapor deposition method from monosilane-argon, monosilane-argon-helium, and monosilane-argonhydrogen mixtures. Addition of argon to the argon-silane mixture increased the deposition rate of silicon films, whereas addition of helium and hydrogen to the same mixture decreased the growth rate. It is shown that the process of silicon film deposition by this method from argon-monosilane mixture is primarily governed by fast secondary electrons, and argon dilution of mixture leads to increasing concentration of fast secondary electrons and increasing deposition rate of silicon films. Dilution of the initial mixture with helium or hydrogen causes a decrease in the deposition rate either due to gas-dynamic behavior of the supersonic jet of the mixture of light and heavy gases, or due to the etching effect of metastable helium atoms or hydrogen atoms on the surface of the growing silicon film.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Effect of diluent gas on silicon film deposition from a free jet of monosilane-diluent mixture activated by electron-beam plasma

Khmel

2012

J. Engin. Thermophys.

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“…The presence of metastable argon atoms in the non‐thermal plasma has been examined by several researchers through the observation and analysis of optical emission spectra and most researchers suggest that these species are present in a significant quantity and contribute to the reactions occurring. These atoms are produced by collision of neutral argon atoms with fast electrons or from the radiative recombination of argon ions with slow electrons

{normale}^{-} + Ar \to {normale}^{-} + Ar *

{normale}^{-} + A {normalr}^{+} \to Ar * + h ν

…”

Section: Resultsmentioning

confidence: 99%

Study on the Reaction of CCl₂F₂with CH₄in a Dielectric Barrier Discharge Nonequilibrium Plasma

Kundu

Kennedy

Mackie

et al. 2013

Plasma Process. Polym.

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The reaction of CCl2F2 (CFC‐12) with methane (in an argon bath gas) in a dielectric barrier discharge (DBD) non‐thermal plasma reactor at atmospheric pressure has been investigated. The reaction (where oxygen and nitrogen are excluded from the feed gas) produced a range of gas phase products, including H2, HCl, HF, CHF3, CF3CH2F, CHClF2, CH3Cl, CH2ClF, CH2Cl2, CHCl2F and CHCl3 as well as solid products which were primarily non‐crosslinked polymers. The conversion of CCl2F2 increased, from 44 to 71%, when the input energy density of the plasma was raised from 3 to 13 kJ · L−1 (applied voltage range is 13.4–14.8 kV, peak‐peak). The relatively low input feed concentration of CCl2F2 and methane in the argon bath gas modifies the strong filamentary appearance of the pure argon discharge to a more diffuse appearance.

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Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method

Баранов

Khmel

Zamchiy

et al. 2016

Physica Status Solidi (a)

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In this work, hydrogenated amorphous silicon suboxide (a‐SiOx:H) thin films have been prepared by gas‐jet electron beam plasma chemical vapor deposition method (GJ EBP CVD) at a substrate temperature 260 °C. The argon to monosilane ratio R = [Ar]/[SiH4] was varied and the influence of the ratio R on the structural and optical properties was investigated. In this method, R affects an oxygen concentration in the film of the silicon suboxide. FTIR measurement showed a decrease of the oxygen concentration from 40.7 to 11% with increasing R. The analysis of FTIR spectra showed the containing a large number polysilane (Si–H2)n groups that suggest the material column structure. Optical transmission spectra were recorded to investigate the optical properties and thickness of the a‐SiOx:H thin films. The maximum of the growth rate is 2 nm s−1 at R = 80. The optical bandgap Eg was derived from Tauc plots. It was found that the increase in the oxygen concentration not only leads to the increase optical bandgap, but also to the decrease the refraction index.

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Role of secondary electrons and metastable atoms in the electron-beam activation of argon-silane mixtures

Cited by 11 publications

References 23 publications

Effect of diluent gas on silicon film deposition from a free jet of monosilane-diluent mixture activated by electron-beam plasma

Effect of diluent gas on silicon film deposition from a free jet of monosilane-diluent mixture activated by electron-beam plasma

Study on the Reaction of CCl₂F₂with CH₄in a Dielectric Barrier Discharge Nonequilibrium Plasma

Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method

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Role of secondary electrons and metastable atoms in the electron-beam activation of argon-silane mixtures

Cited by 11 publications

References 23 publications

Effect of diluent gas on silicon film deposition from a free jet of monosilane-diluent mixture activated by electron-beam plasma

Effect of diluent gas on silicon film deposition from a free jet of monosilane-diluent mixture activated by electron-beam plasma

Study on the Reaction of CCl2F2with CH4in a Dielectric Barrier Discharge Nonequilibrium Plasma

Structural and optical properties of a‐SiOx:H thin films deposited by the GJ EBP CVD method

Contact Info

Product

Resources

About

Study on the Reaction of CCl₂F₂with CH₄in a Dielectric Barrier Discharge Nonequilibrium Plasma

Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method