2015
DOI: 10.1016/j.jallcom.2015.06.218
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Role of growth temperature on the structural, optical and electrical properties of ZnO thin films

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Cited by 21 publications
(3 citation statements)
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“…In contrast to the change of the E 2 (high) phonon, the signal of the A 1 (LO) mode became more significant as the Ag atoms doped into the ZnO film increased, and an apparent and wide peak was identified from the Raman spectrum of the ZnO film doped at the Ag level of 5%. The enhancement on the A 1 (LO) signal implied the increase of the defects in the ZnO film since the A 1 (LO) mode is represented to the defect complexes, such as zinc interstitial (Zn I ) and oxygen vacancy (V O ) in the ZnO lattice [ 33 , 34 ]. In addition, another weak peak at around 414 cm −1 induced by the localized vibration mode ( LVM ) in the ZnO film appeared in the Raman spectra of the Ag-ZnO co-sputtered film.…”
Section: Resultsmentioning
confidence: 99%
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“…In contrast to the change of the E 2 (high) phonon, the signal of the A 1 (LO) mode became more significant as the Ag atoms doped into the ZnO film increased, and an apparent and wide peak was identified from the Raman spectrum of the ZnO film doped at the Ag level of 5%. The enhancement on the A 1 (LO) signal implied the increase of the defects in the ZnO film since the A 1 (LO) mode is represented to the defect complexes, such as zinc interstitial (Zn I ) and oxygen vacancy (V O ) in the ZnO lattice [ 33 , 34 ]. In addition, another weak peak at around 414 cm −1 induced by the localized vibration mode ( LVM ) in the ZnO film appeared in the Raman spectra of the Ag-ZnO co-sputtered film.…”
Section: Resultsmentioning
confidence: 99%
“…As can be seen in Figure 7 a, the core level of the O 1s for the undoped ZnO film exhibited a peak at 532.0 eV with asymmetric behavior, which could be deconvoluted into three types of oxygen groups. The peaks at around 529.7 eV and 531.1 eV (denoted as O I and O II in the figure) were respectively attributed to the oxygen ions in the fully oxidized surrounding (i.e., Zn-O bonding) and in oxygen-deficient regions (i.e., oxygen vacancy), whereas the peak at about 532.2 eV (denoted as O III ) was related to the hydroxyl (OH) group or the loosely bound oxygen on the surface [ 21 , 34 , 37 , 38 ]. Compared to the undoped ZnO film, the O 1s peak measured from the surface of the ZnO film co-sputtered at the Ag atomic ratio of 3% shifted to about 531.5 eV with a significant satellite peak at 529.7 eV and a tail extending to low binding energy.…”
Section: Resultsmentioning
confidence: 99%
“…ALD ZnO has a huge variation in properties with deposition temperature, explored in detailed investigations on solo ZnO layers. 41,51,120,121 Both the carrier concentration and mobility of ZnO decrease at low temperatures (Fig. 4).…”
Section: Deposition Temperaturementioning
confidence: 96%