Role of different scattering mechanisms on the temperature dependence of transport in graphene

Sarkar, Suman; Amin, Kazi Rafsanjani; Modak, Ranjan; Singh, Amandeep; Mukerjee, Subroto; Bid, Aveek

doi:10.1038/srep16772

Cited by 25 publications

(19 citation statements)

References 38 publications

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“…[134] Also, as the mechanical test is performed in an environment containing a high-energy electron beam, attention must be paid on how electron beam irradiation (EBI) would affect the mechanical properties of NWs. [83,135] Thermal effect and knock-on effect from energetic electrons in TEM or SEM may contribute to NW specimens damage. [136] Thermal effect induced by energetic electrons is difficult to quantify, however recent studies have revealed that the temperature increase of a NW sample during a normal TEM imaging process is far below 100 °C.…”

Section: The Challenges Of Em Testsmentioning

confidence: 99%

The Mechanical Properties of Nanowires

2017

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Applications of nanowires into future generation nanodevices require a complete understanding of the mechanical properties of the nanowires. A great research effort has been made in the past two decades to understand the deformation physics and mechanical behaviors of nanowires, and to interpret the discrepancies between experimental measurements and theoretical predictions. This review focused on the characterization and understanding of the mechanical properties of nanowires, including elasticity, plasticity, anelasticity and strength. As the results from the previous literature in this area appear inconsistent, a critical evaluation of the characterization techniques and methodologies were presented. In particular, the size effects of nanowires on the mechanical properties and their deformation mechanisms were discussed.

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Section: The Challenges Of Em Testsmentioning

confidence: 99%

The Mechanical Properties of Nanowires

2017

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“…It is believed that the transport properties of graphene are mainly defined by carrier scattering on charged impurities . However, in pure samples short‐range scattering can play an important role . It was shown that the type of the scattering can be recognized from the shape of the conductivity dependence measured as a function of the back gate voltage.…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance of Monolayer Graphene With Short‐Range Disorder

Vasil’eva

Alekseev

Vasilyev

et al. 2019

Physica Status Solidi (b)

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The effect of magnetic field on electron transport in graphene monolayers with various levels of impurity doping is studied. In samples with low impurity doping a square root magnetoresistance appears away from the Dirac point and no such magnetoresistance is observed in low mobility monolayers with high impurity doping. The difference in magnetoresistance is attributed to different types of scattering mechanisms in various samples. Our data for graphene monolayers with low impurity concentration shows a good agreement with theory over a wide range of magnetic fields.

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“…5,[7][8][9] The disadvantage of these methods is, that the conditions under which the mobility is obtained are not the same as for a transistor structure. Alternatively, a commonly accepted experimental method for finding mobility values by direct measurements on G-FETs is to fit a simplified expression for the drain resistance to drain resistance--gate voltage characteristics [10][11][12][13][14] R ¼ R c þ ðL=WÞðqlÞ À1 ððn 0 2 0 þ ðCðV g À V Dirac Þ=qÞ 2 Þ À1=2 :…”

Section: Introductionmentioning

confidence: 99%

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Bonmann

Vorobiev

Stake

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A semiempirical model describing the influence of interface states on characteristics of gate capacitance and drain resistance versus gate voltage of top gated graphene field effect transistors is presented. By fitting our model to measurements of capacitance–voltage characteristics and relating the applied gate voltage to the Fermi level position, the interface state density is found. Knowing the interface state density allows us to fit our model to measured drain resistance–gate voltage characteristics. The extracted values of mobility and residual charge carrier concentration are compared with corresponding results from a commonly accepted model which neglects the effect of interface states. The authors show that mobility and residual charge carrier concentration differ significantly, if interface states are neglected. Furthermore, our approach allows us to investigate in detail how uncertainties in material parameters like the Fermi velocity and contact resistance influence the extracted values of interface state density, mobility, and residual charge carrier concentration.

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Role of different scattering mechanisms on the temperature dependence of transport in graphene

Cited by 25 publications

References 38 publications

The Mechanical Properties of Nanowires

The Mechanical Properties of Nanowires

Magnetoresistance of Monolayer Graphene With Short‐Range Disorder

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

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