Rietveld-refinement study of aluminium and gallium nitrides

Paszkowicz, W.; Podsiadło, S.; Minikayev, R.

doi:10.1016/j.jallcom.2004.05.036

Cited by 119 publications

(65 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The obtained results are collected in Table 1. The lattice parameter values match well with those previously reported in literature [25,26]. The AlN layers synthesized at low mixture pressure show a promising morphology and phase composition for the application in electronic devices.…”

Section: Resultssupporting

confidence: 89%

Structure of AlN films deposited by magnetron sputtering method

Nowakowska-Langier

Choduń

Zdunek

et al. 2015

Materials Science-Poland

Self Cite

View full text Add to dashboard Cite

AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N 2 . Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N 2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite) structure in which the crystallographic orientation depends on the gas mixture pressure.

show abstract

Section: Resultssupporting

confidence: 89%

Structure of AlN films deposited by magnetron sputtering method

Nowakowska-Langier

Choduń

Zdunek

et al. 2015

Materials Science-Poland

Self Cite

View full text Add to dashboard Cite

show abstract

“…To compare the local structures, the low-r regions of the G(r) profiles of LiAl(ND 2 ) 4 before and after the heat treatment are shown with simulated patterns of LiAl(ND 2 ) 4 (this work), Li 3 AlN 2 , 15) AlN, 16) LiND 2 14) and Li 2 ND 13) in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

“…The PDF refinements of the G(r) profiles were performed in the region of 0.05¯r¯0.50 nm, which includes more than 500 bonding pairs ( 16) were obtained from the literature. Lattice parameters and thermal factors of all three models were refined.…”

Section: Resultsmentioning

confidence: 99%

Local Structural Analysis on Decomposition Process of LiAl(ND<sub>2</sub>)<sub>4</sub>

Ikeda¹,

Otomo

Ohshita³

et al. 2014

Mater. Trans.

View full text Add to dashboard Cite

Local structural changes that accompany amorphization during the decomposition of LiAl(ND 2 ) 4 were investigated by neutron total scattering measurements. Structure factors before the decomposition were attributed to single-phase LiAl(ND 2 ) 4 characterized by isolated [ND 2 ] units. Atomic pair distribution functions after heat treatments at 433 and 673 K showed that LiAl(ND 2 ) 4 decomposed to amorphous mixed phases that contain Li 3 AlN 2 and AlN.

show abstract

“…Therefore, it is useful to know the band gap for the fully strained material. Assuming that GaN buffer layer is fully relaxed (a GaN 0 ¼ 3:1894 A [19]) and InGaN epilayer with 0 < x < 0.2 is fully strained on the GaN, the band gap is calculated as…”

Section: Resultsmentioning

confidence: 99%

Dielectric function and bowing parameters of InGaN alloys

Sakalauskas

Tuna

Kraus

et al. 2012

Physica Status Solidi (b)

View full text Add to dashboard Cite

Ga-rich (0001)-oriented In x Ga 1Àx N alloys grown by molecular beam epitaxy or metal-organic vapour phase epitaxy on GaN/ sapphire templates were investigated by spectroscopic ellipsometry at room temperature. The analysis of the extracted dielectric function yielded the characteristic transition energies, i.e., for the band gaps and the high-energy critical points (van Hove singularities). Accounting for strain by using the k Á p formalism, a band-gap bowing parameter of 1.65 AE 0.07 eV for strain-free material was deduced. It is consistent with the ab initio calculated band-gap-dependence for uniform (not clustered) InGaN alloys. The bowing parameters for the highenergy inter-band transitions were found to be close to $1 eV.

show abstract

Rietveld-refinement study of aluminium and gallium nitrides

Cited by 119 publications

References 47 publications

Structure of AlN films deposited by magnetron sputtering method

Structure of AlN films deposited by magnetron sputtering method

Local Structural Analysis on Decomposition Process of LiAl(ND<sub>2</sub>)<sub>4</sub>

Dielectric function and bowing parameters of InGaN alloys

Contact Info

Product

Resources

About