MRS Proc. 2001 DOI: 10.1557/proc-688-c7.7.1 View full text
Akira Shibuya, Jung-Hyuk Koh, Alex Grishin, Veronika Kugler, Denis Music, Ulf Helmersson, Masanori Okuyama

Abstract: AbstractRecently we proposed ferroelectric sodium potassium niobate (Na0.5K0.5NbO3, NKN) thin films to be a candidate for applications in nonvolatile memories and electrically tunable devices [1-5]. In this paper we report on processing and characterization of metal-ferroelectric-insulatorsemiconductor (MFIS) diode structures based on RF-magnetron sputtered NKN films. 0.7 μm thick NKN films have been deposited at 650 °C on the thermally grown 47 nm thick SiO2 layer on Si(001) wafers. Stoichiometric Na0.5K0.5Nb…

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