Review of Techniques for Epitaxial Growth of High-Resistivity GaAs — Growth Systems, Problems and Substrate Effects

Direct-coupled GaAs ring oscillators with self-aligned gates

“…Eleven-stage ring oscillators were fabricated using a layered GaAs structure grown on a Cr-doped substrate by AsC13-Ga-H, vapor phase epitaxy [6]. A dual-layer buffer consisting of a Cr-doped region followed by an undoped region is deposited first and is then followed by deposition of a 0.5 pm-thick channel layer doped at 7 X 10" cmW3.…”