Review of nanostructured NiO thin film deposition using the spray pyrolysis technique

Ukoba, Kingsley; Eloka‐Eboka, Andrew C.; Inambao, Freddie L.

doi:10.1016/j.rser.2017.10.041

Cited by 196 publications

(76 citation statements)

References 88 publications

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“…The NiO films (thickness 28-30 nm) deposited on stainless steel showed a specific capacity above 1300 mAh/g, which is significantly more than the theoretical capacity of bulk NiO (718 mAh/g) because it includes the capacity of the NiO film and the pseudo-capacity of the gel-like solid electrolyte interface film. The presence of pseudo-capacity and its increase during cycling is discussed based on a detailed analysis of cyclic voltammograms and charge-discharge curves (U(C)).NiO nanofilms are produced using various methods [12] such as thermal spraying, pulsed laser deposition, sol-gel, spin-coating, dip-coating, chemical vapor deposition, and atomic layer deposition (ALD). ALD is the most promising technology because it provides control over the thickness and purity of coatings with high precision, and can deposit uniform surface coatings on of complex shape and even porous and high aspect ratio substrates [13][14][15].…”

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“…NiO nanofilms are produced using various methods [12] such as thermal spraying, pulsed laser deposition, sol-gel, spin-coating, dip-coating, chemical vapor deposition, and atomic layer deposition (ALD). ALD is the most promising technology because it provides control over the thickness and purity of coatings with high precision, and can deposit uniform surface coatings on of complex shape and even porous and high aspect ratio substrates [13][14][15].…”

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Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries

et al. 2019

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Atomic layer deposition (ALD) provides a promising route for depositing uniform thin-film electrodes for Li-ion batteries. In this work, bis(methylcyclopentadienyl) nickel(II) (Ni(MeCp) 2 ) and bis(cyclopentadienyl) nickel(II) (NiCp 2 ) were used as precursors for NiO ALD. Oxygen plasma was used as a counter-reactant. The films were studied by spectroscopic ellipsometry, scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray reflectometry, and X-ray photoelectron spectroscopy. The results show that the optimal temperature for the deposition for NiCp 2 was 200-300 • C, but the optimal Ni(MeCp) 2 growth per ALD cycle was 0.011-0.012 nm for both precursors at 250-300 • C. The films deposited using NiCp 2 and oxygen plasma at 300 • C using optimal ALD condition consisted mainly of stoichiometric polycrystalline NiO with high density (6.6 g/cm 3 ) and low roughness (0.34 nm). However, the films contain carbon impurities. The NiO films (thickness 28-30 nm) deposited on stainless steel showed a specific capacity above 1300 mAh/g, which is significantly more than the theoretical capacity of bulk NiO (718 mAh/g) because it includes the capacity of the NiO film and the pseudo-capacity of the gel-like solid electrolyte interface film. The presence of pseudo-capacity and its increase during cycling is discussed based on a detailed analysis of cyclic voltammograms and charge-discharge curves (U(C)).NiO nanofilms are produced using various methods [12] such as thermal spraying, pulsed laser deposition, sol-gel, spin-coating, dip-coating, chemical vapor deposition, and atomic layer deposition (ALD). ALD is the most promising technology because it provides control over the thickness and purity of coatings with high precision, and can deposit uniform surface coatings on of complex shape and even porous and high aspect ratio substrates [13][14][15]. This method could be a crucial factor for transition from 2D to 3D solid-state batteries (SSB), which are structured on 3D substrates with high aspect ratio instead of planar substrates. It could increase the energy density of SSB with the same thickness of the electrode to maintain the required conductivity of the layers [16]. ALD is based on a realization of the sequence of chemical reactions between gaseous reagents and the surface species of the substrate, separated in time by purges with an inert gas to prevent uncontrolled reactions between the reactants and the reaction products. Because of the self-limiting nature, this method allows the deposition of films in a layer-by-layer fashion and the control of the thickness with high precision [13].When selecting the deposition conditions via ALD, it is necessary to consider the stability and reactivity of the precursors. Many precursors have been tested for ALD NiO so far, but the most frequently used are shown in Table 1: nickel(II) acetylacetonate (Ni(acac) 2 ), bis(2,2,6,6-tetramethylheptane-3,5dionate)nickel(II) (Ni(thd) 2 ), bis(cyclopentadienyl) nickel(II) (NiCp 2 ), and NiCp 2 -based compounds such as ...

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Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries

et al. 2019

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“…The reactive zone is, in the case of film deposition, the space near the surface of the hot substrate (a few millimeters above the surface of the substrate), or the furnace heated chamber, in the case of powder synthesis. Figure 2 shows a diagram of the different stages at which the droplet is subjected as it approaches the hot substrate for two cases a fixed droplet size and speed, different (increasing from A to D, Figure 2a) temperature of the substrate and fixed substrate temperature and speed of different droplet sizes (decreasing droplet size from A to D, Figure 2b) [23,24]. At low temperature (large initial droplet size), the solvent within the droplet is not completely vaporized and the liquid droplet hits the substrate and upon contact with it vaporizes leaving a ring-shaped dry precipitate on the substrate (process A).…”

Section: Spray Pyrolysis As Materials Synthesis Techniquementioning

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Spray Pyrolysis Technique; High-K Dielectric Films and Luminescent Materials: A Review

2018

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The spray pyrolysis technique has been extensively used to synthesize materials for a wide variety of applications such as micro and sub-micrometer dimension MOSFET´s for integrated circuits technology, light emitting devices for displays, and solid-state lighting, planar waveguides and other multilayer structure devices for photonics. This technique is an atmospheric pressure chemical synthesis of materials, in which a precursor solution of chemical compounds in the proper solvent is sprayed and converted into powders or films through a pyrolysis process. The most common ways to generate the aerosol for the spraying process are by pneumatic and ultrasonic systems. The synthesis parameters are usually optimized for the materials optical, structural, electric and mechanical characteristics required. There are several reviews of the research efforts in which spray pyrolysis and the processes involved have been described in detail. This review is intended to focus on research work developed with this technique in relation to high-K dielectric and luminescent materials in the form of coatings and powders as well as multiple layered structures.

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“…Currently, ZnO films are deposited by using the spin coating and spray pyrolysis methods, which consist of inexpensive and non-complex apparatus [6,7]. In contrast, the NiO films by these methods not only require a toxic precursor but also produce the porous film [8,9]. Presently, the NiO films are synthesized by chemical vapor deposition (CVD), electron beam evaporation and sputtering.…”

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Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction

Tippo

Thongsuwan

Wiranwetchayan

et al. 2020

Mater. Res. Express

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Nickel oxide (NiO) film receives attention from the field of optoelectronics due to its wide band gap and high transparency. By using a sparking method, the deposition of the NiO film is facile and unique. However, the NiO film made by the sparking method indicates a porous surface with an agglomeration of its particles. In order to reduce the porousness of the NiO film, the assistance of a permanent magnet in the sparking apparatus is presented. Here, we report the investigation of the NiO film and the p-NiO/n-ZnO heterojunction deposited by the sparking method under a magnetic field. Our results demonstrate that the porosity of the NiO film was reduced by increasing the magnitude of a magnetic field from 0 mT to 375 mT. Furthermore, the crystallinity and the electrical properties of the NiO film are improved by the influent of a magnetic field. For heterojunction, the best device shows the rectification ratio of 95 and the ideality factor of 4.92. This work provides an alternative method for the deposition of the NiO film with promising applications in optoelectronic devices.

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Review of nanostructured NiO thin film deposition using the spray pyrolysis technique

Cited by 196 publications

References 88 publications

Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries

Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries

Spray Pyrolysis Technique; High-K Dielectric Films and Luminescent Materials: A Review

Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction

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