1994
DOI: 10.1016/s0257-8972(05)80002-7
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Review of CVD TiN coatings for wear-resistant applications: deposition processes, properties and performance

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Cited by 173 publications
(68 citation statements)
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“…Like most of refractory transition metal nitrides with NaCl-type structure, TiN is a superconductor with transition temperature about 5 K. TiN x keeps NaCl-type structure at a variant of N content (0.6<x<1.2), with different lattice constants and physical properties. [1] TiN has been mainly applied in hard coatings, [2] due to it exceptional combination of physical properties and chemical and metallurgical stability. [3] Some calculations have given detailed information about the electronic energy-band structure, indicating it is a conductor at ambient condition.…”
mentioning
confidence: 99%
“…Like most of refractory transition metal nitrides with NaCl-type structure, TiN is a superconductor with transition temperature about 5 K. TiN x keeps NaCl-type structure at a variant of N content (0.6<x<1.2), with different lattice constants and physical properties. [1] TiN has been mainly applied in hard coatings, [2] due to it exceptional combination of physical properties and chemical and metallurgical stability. [3] Some calculations have given detailed information about the electronic energy-band structure, indicating it is a conductor at ambient condition.…”
mentioning
confidence: 99%
“…The temperature of the reaction gases entering the reactor is 300 K. The mass fraction of silane is kept at 0.1 because it ensures sufficient amounts of precursor gas in the mixture (Rebenne and Bhat, 1994). The inlet flow velocity, V , and susceptor temperature, T , contributes a lot in the flow and the deposition profile so they are considered as the design variables in this case study.…”
Section: Figmentioning
confidence: 99%
“…Other modern CVD processes reach high or ultra-high vacuum (below 6 10 − Pa) and have high-quality thin-film depositions. Table 1 Common materials in different applications of the CVD processes (Sherman, 1987;Gardeniers et al, 1989;Breiland and Coltrin, 1990;Fotiadis et al, 1990;Creighton and Parmeter, 1993;Gladfelter, 1993;Rebenne and Bhat, 1994;Cheng et al, 1995;Hintermann, 1996;Mahajan, 1996 A CVD instrument with plasma enhancement where higher density of reactant species are produced to the substrate due to the high-energy electron impact. Higher activity of the gaseous species allows deposition at comparatively low temperature (450 to 650 K).…”
mentioning
confidence: 99%
“…TiN coating is also used in integrated circuits, solar cells, transparent films, and photothermal conversion 19 . Various deposition methods have been employed to deposit TiN coatings, such as dip-coating, sol-gel, thermal oxidation, e-beam, sputtering, chemical vapor deposition (CVD), plasma-enhanced CVD, metalorganic CVD, and molecular beam epitaxy 14,[20][21][22][23][24][25][26][27][28][29][30] .…”
Section: Introductionmentioning
confidence: 99%