Revealing Quantitative 3D Chemical Arrangement on Ge−Si Nanostructures

Multiwavelength anomalous diffraction and diffraction anomalous fine structure to study composition and strain of semiconductor nanostructures

“…Their composition has been experimentally studied by various techniques such as quantitative high-resolution Transmission Electron Microscopy (TEM) [66], X-ray Energy Dispersive Spectrometry (XEDS) [67], X-ray Absorption Fine Structure spectroscopy [68], Anomalous X-Ray Diffraction (AXRD) [41-43, 69, 70] and by combining selective wet chemical etching with Atomic Force Microscopy (AFM) [71].…”

Coupled evolution of composition and morphology in a faceted three-dimensional quantum dot

“…Therefore, a large facet tries to remove Ge atoms and put them either on the island top or at the facet edges. Indeed, recent experimental work 28 based on X-ray analysis of the threedimensional composition profile has shown that different facets have an average composition unambiguously different from each other.…”

Advanced Electron Microscopy Techniques on Semiconductor Nanowires: from Atomic Density of States Analysis to 3D Reconstruction Models

“…Lately, and thanks to the development of the HAADF STEM tomography technique, application of electron tomography to crystalline nanostructures such as nanowires has been extended. In this way, it has been applied for example to analyze the 3D morphology of core-shell GaPGaAs NWs (Verheijen et al, 2007), the 3D structure of helical and zigzagged nanowires (Kim et al, 2008), the microsctructure of magnetic CoFe 2 O 4 nanowires inside carbon nanotubes (Ersen et al, 2008), the 3D surface defects in core-shell nanowires (Arslan et al, 2008), the homogeneity of prismatic heterostructures on the facets of catalyst-free GaAs nanowires (Heigoldt et al, 2009), the 3D chemical arrangement on Ge-Si Nanostructures (Montoro et al, 2009) or the 3D line edge roughness in Cu NWs (Ercius et al, 2009). …”