Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field‐Effect Transistors

Mathijssen, Simon G. J.; Spijkman, Mark-Jan; Andringa, Anne-Marije; Hal, Paul A. van; McCulloch, Iain; Kemerink, Martijn; Janssen, Raj René; Leeuw, Dago M. de

doi:10.1002/adma.201001865

Cited by 106 publications

(99 citation statements)

References 31 publications

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“…bias stress effects). [17] These shortcomings, combined with the limiting air-instability typically observed for organic semiconductors, make still unclear whether solution deposition will offer sufficient technological and commercial advantages over the existing inorganic technologies.…”

Section: Introductionmentioning

confidence: 99%

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Pozo

Fabiano

Pfattner

et al. 2015

Adv Funct Materials

122

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In electronics, the field-effect transistor (FET) is a crucial corner stone and successful integration of this semiconductor device into circuit applications requires stable and ideal electrical characteristics over a wide range of temperatures and environments. Solution processing, using printing or coating techniques, has been explored to manufacture organic field-effect transistors (OFET) on flexible carriers; enabling radically novel electronics applications. Ideal electrical characteristics, in organic materials, are typically only found in single crystals. Tiresome growth and manipulation of these hamper practical production of flexible OFETs circuits. To date, neither devices nor any circuits, based on solution-processed 2 OFETs, has exhibited an ideal set of characteristics similar or better than today's FET technology based on amorphous silicon (a-Si FETs). Here, we report bar-assisted meniscus shearing of dibenzo-tetrathiafulvalene to coat-process self-organized crystalline organic semiconducting domains with high reproducibility. Including these coatings as the channel in OFETs, we observe electric field-and temperature-independent charge carrier mobility and no bias stress effects. Further, we measure record-high gain in OFET inverters and exceptional operational stability in both air and water.

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Section: Introductionmentioning

confidence: 99%

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Pozo

Fabiano

Pfattner

et al. 2015

Adv Funct Materials

122

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“…17 Mathijssen et al repported bias stress in OFETs-prepared on heavily doped Si wafers acting as a common gate with 200 nm thermally grown SiO 2 gate dielectric-to be caused by charge trapping in the gate dielectric established by the fact that the threshold voltage shift is sustained upon depositing a pristine organic semiconductor on the exposed dielectric of a stressed and delaminated transistor. 18 Wang et al correlate bias stress instability in pentacene thin film transistors (TFTs) to the timedependent charge trapping in both the channel and the metal/ organic contact regions since they found that the shift in threshold voltage is accompanied by an increase in contact resistance. 19 Street et al suggested that formation of hole bipolarons is responsible for the observed bias stress effect in polymer TFTs, given that the number of holes removed from the channel per time and area is proportional to the square of their concentration.…”

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confidence: 99%

Bias stress effect in polyelectrolyte-gated organic field-effect transistors

Sinno

Fabiano

Crispin

et al. 2013

Applied Physics Letters

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A main factor contributing to bias stress instability in organic transistors is charge trapping of mobile carriers near the gate insulator-semiconductor interface into localized electronic states. In this paper, we study the bias stress behavior in low-voltage (p-type) polyelectrolyte-gated organic field effect transistors (EGOFETs) at various temperatures. Stressing and recovery in these EGOFETs are found to occur six orders of magntiude faster than typical bias stress/recovery reported for dielectric-gated OFETs. The mechanism proposed for EGOFETs involves an electron transfer reaction between water and the charged semiconductor channel that promotes the creation of extra protons diffusing into the polyelectrolyte

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“…The revealed gate dielectric is then accessible for characterization with scanning Kelvin probe microscopy (SKPM). 9,10 This technique was earlier applied to reveal the location of trapped charges due to gate bias stress 11 and to link the threshold voltage shift in a transistor with a SAM-modified gate dielectric to charges trapped by the SAM. 12 To apply the exfoliation technique, we choose organic semiconductors.…”

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confidence: 99%

Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors

Andringa

Roelofs

Sommer

et al. 2012

Applied Physics Letters

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Field-effect transistors have emerged as NO2 sensors. The detection relies on trapping of accumulated electrons, leading to a shift of the threshold voltage. To determine the location of the trapped electrons we have delaminated different semiconductors from the transistors with adhesive tape and measured the surface potential of the revealed gate dielectric with scanning Kelvin probe microscopy. We unambiguously show that the trapped electrons are not located in the semiconductor but at the gate dielectric. The microscopic origin is discussed. Pinpointing the location paves the way to optimize the sensitivity of NO2 field-effect sensors.

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Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field‐Effect Transistors

Cited by 106 publications

References 31 publications

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Bias stress effect in polyelectrolyte-gated organic field-effect transistors

Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors

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