Response of cathodoluminescence of alkali feldspar to He+ ion implantation and electron irradiation

Kayama, Masahiro; Nishido, Hirotsugu; Toyoda, Shin; Komuro, Kosei; Finch, Adrian A.; Lee, Martin; Ninagawa, K.

doi:10.2478/s13386-013-0130-9

Cited by 1 publication

(1 citation statement)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar phenomenon has been also observed in annealing experiments of highly metamict zircon (Nasdala et al, 2002). Kayama et al (2013) also demonstrated a similar reduction of emission intensity accompanied with a decrease in crystallinity of feldspars by He + ion implantation, which is caused by the ionization effect, the luminescence quenching or lowering of luminescence efficiency due to a change in activation energy associated with hopping between adjacent channels, as suggested by Curie (1963), Brooks et al (2001) and King et al (2011). Similar reduction of the luminescence efficiency has been also found in CL of quartz (King et al, 2011).…”

Section: Narrow Emission Peakssupporting

confidence: 67%

Annealing effects on cathodoluminescence of zircon

Tsuchiya

Kayama

Nishido

et al. 2015

Journal of Mineralogical and Petrological Sciences

Self Cite

View full text Add to dashboard Cite

Color cathodoluminescence (CL) images of zircon from southern Malawi (MZ) show mottled yellow CL emissions on a dull luminescent background by the annealing below 600°C, and relatively homogeneous blue emissions above 800°C. CL spectroscopy of the samples reveals a change of the luminescent features with an annealing temperature, and explains a variation of their colors and luminance observed by a CL microscope. Emission bands at 310 and 380 nm in an ultraviolet (UV) to blue CL are assigned to intrinsic centers in host lattice, narrow peaks at 475 and 580 nm to Dy 3+ impurity centers, and broad bands at 500 to 650 nm to Frenkeltype defects and SiO m n− groups. The former two show increases in emission intensities against annealing temperature, but the latter exhibits an increase in intensity up to 300°C and a decrease above 300 to 700°C. An increase in an annealing temperature leads to a reproduction of the intrinsic centers, which is responsible for an increase in UV-blue emission, in host lattice accompanied with a recrystallization from metamict state. An increase in the intensities of narrow peaks activated by Dy 3+ impurities may result possibly from a recovery of ionization due to the self-radiation and an energy transfer of other REEs to Dy 3+ activator. A gradual increase in yellow emission bands up to 300°C might be caused by a migration of the hole around a thermally-instable lattice defect and/or activated impurities into a more stable site related to Frenkel-type defects and SiO m n− groups, whereas the yellow should be subsequently reduced due to an elimination of these defects.

show abstract