We investigate low-temperature transport through two identical vertically coupled quantum dots in a triple-barrier heterostructure. The current-voltage curve exhibits two series of current steps of different magnitude. On the basis of magnetotunneling measurements, we relate the current steps to the single-particle levels of a quantum-dot molecule. From the absence of many-particle phenomena, an upper limit of 1 ns is determined for the energy-relaxation time in the double-dot system.[ S0031-9007(97) Quantum dots are zero-dimensional systems which exhibit confinement in all three dimensions of space. Rich spectra of discrete single-and many-electron states of such "artificial atoms" were studied by single-electron tunneling (SET) and capacitance spectroscopy [1]. SET through quantum dots, which are coupled via tunneling barriers to two contacts, leads to steps in the currentvoltage curve I͑V ͒, whenever discrete dot levels become energetically available for transport [2][3][4].Recently, researchers focused on the interplay of two quantum dots in series coupled by a central tunneling barrier [5][6][7][8][9][10][11][12][13][14]. The bulk of existing work considers the intradot and interdot Coulomb interaction in double-dot systems (DDS) with many electrons [8][9][10][11][12][13][14]. SET between weakly coupled dots was interpreted as a sequential process which requires two discrete levels in the dots to be lined up in energy (taking due account for charging effects). This condition is fulfilled only at certain specific bias voltages which leads to sharp peaks in the I͑V ͒ curve [6,10]. Experiments on strongly coupled DDS provided evidence for coherent interdot coupling [11,12].In this Letter, we investigate the single-particle regime of a strongly coupled DDS which was fabricated by imposing a submicron lateral confinement on a triplebarrier heterostructure. The I͑V ͒ curve exhibits steps reminiscent of SET in single dots. We attribute these current steps to SET through discrete single-particle states extended over both identical dots due to coherent interdot coupling. Thus, our DDS represents an ionized "artificial hydrogen molecule." From the magnitude of the steps, we estimate the energy-relaxation time in the DDS.The triple-barrier heterostructure was grown by molecular-beam epitaxy on an n 1 -type GaAs substrate. As shown in Fig. 1(a), the undoped active layers comprise two 6 nm GaAs quantum wells A and B which are strongly coupled to each other by a 1 nm thin center AlAs barrier and weakly coupled to two n-doped contact layers by 4 nm thick AlAs barriers. The Si doping profile of the contact layers is graded from 2 3 10 18 cm 23 to zero adjacent to the undoped triple-barrier region. Figure 1(b) shows the conduction-band profile V ͑z͒ of the heterostructure in growth direction for zero bias and V 200 mV. It was calculated with a Poisson solver in Thomas-Fermi approximation. From the wafer we fabricated free-standing pillars with Ohmic contacts [2] and measured their dc I͑V ͒ curves in a dilution refrigerator ...