Resistive switching in multiferroic BiFeO3 films: Ferroelectricity versus vacancy migration

Rodríguez, Alexander Cardona; Arango, Isabel C.; Gomez, Maria F.; Domínguez, Claribel; Trastoy, Juan; Urban, Christian; Sulekar, Soumitra; Nino, Juan C.; Schuller, Iván K.; Gómez, M. E.; Ramírez, Juan Gabriel

doi:10.1016/j.ssc.2018.11.005

Cited by 10 publications

(6 citation statements)

References 25 publications

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“…Given the low doping concentration of cobalt, and that not every cobalt atom is +2 valent, the concentration of oxygen vacancies may be lower than that of bismuth vacancies. In summary, the concurrent mechanisms that contribute to the RS effect, including ferroelectric domain switching and vacancy migration at the interface, may be applicable to our BFC devices …”

Section: Resultsmentioning

confidence: 99%

“…In summary, the concurrent mechanisms that contribute to the RS effect, including ferroelectric domain switching and vacancy migration at the interface, may be applicable to our BFC devices. 45 The resistivity of BFC is high, so the Fermi level of BFC approaches or is lower than the middle of the band gap. Given that the electron affinity of BFC is ∼3.3 eV and the BFC has a band gap of ∼2.5 eV, 44,46 the work-function of BFC is derived as (3.3 + 1.25 + x) = (4.55 + x) eV, where x is a small constant.…”

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confidence: 99%

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Ferroresistive Diode Currents in Nanometer-Thick Cobalt-Doped BiFeO₃ Films for Memory Applications

Liu

Lin

et al. 2020

ACS Appl. Nano Mater.

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Ferroelectric diodes hold significant promise for potential applications in nonvolatile memories and logic devices. The nondestructive readout of binary information can be achieved by using a bipolar switching with two different conductances under two opposite polarizations in a ferroelectric diode, which exhibits ultrahigh density and ultrafast operating speed. However, the diode current is limited because most ferroelectrics have wide band gaps. Therefore, in modern micromemory circuits, obtaining a sufficient ferroresistive diode current to detect the status of memory stably is a major challenge. Herein, a high current-intensity resistive switching behavior in nanometer-thick BiFe 0.9 Co 0.1 O 3 films is reported. Epitaxial films were prepared on a (00l) Nb/SrTiO 3 single-crystal substrate via the chemical solution epitaxial deposition method. The conductance of the BiFeO 3 diode improved by up to 200 times that of the original. This improvement can be attributed to the bandgap decrease in ferroelectric film induced by Co doping, as confirmed by spectrophotometry and firstprinciples calculations. This device shows a stable bipolar resistive switching feature, a satisfactory switching ratio of ∼10 3 , good data retention, and antifatigue characteristics for up to 10 7 cycles. The results are useful in exploring the potential applications of a ferroelectric diode in RRAM.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Ferroresistive Diode Currents in Nanometer-Thick Cobalt-Doped BiFeO₃ Films for Memory Applications

Liu

Lin

et al. 2020

ACS Appl. Nano Mater.

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“…Diagrama de fases de La 1−x Sr x MnO 3 resaltando las fases ferromagnéticas y antiferromagnéticas y las fases aislantes y metálicas por el campo eléctrico en la magnetización son débiles. Mediante voltajes eléctricos se ha podido controlar la resistencia del material y su polarización eléctrica en estructuras de tipo capacitor (Cardona et al, 2019). Además, el acoplamiento magnetoeléctrico se ha podido explorar en heteroestructuras multiferroicas (Domínguez et al, 2012) y en nanopartículas (Carranza-Celis et al, 2019).…”

Section: Materiales óXidos Complejosunclassified

“…Mediante voltajes eléctricos se ha podido controlar la resistencia del material y su polarización eléctrica en estructuras de tipo capacitor (Cardona et al, 2019). Además, el acoplamiento magnetoeléctrico se ha podido explorar en heteroestructuras multiferroicas (Domínguez et al, 2012) y en nanopartículas (Carranza-Celis et al, 2019).…”

Section: Materiales óXidos Complejosunclassified

Fenómenos interfaciales en multicapas y superredes magnéticas: revisión y perspectivas

Gómez¹,

Marín²,

Sánchez³

et al. 2023

Rev. Acad. Colomb. Cienc. Ex. Fis. Nat.

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En las últimas ocho décadas la comprensión de los mecanismos físicos que ocurren en la superficie límite entre dos materiales diferentes ha estado en constante evolución. Su interés radica en la ruptura de la simetría cristalina y la reducción de la coordinación atómica, las cuales producen modificaciones en el tipo y la ocupación orbital de los átomos en la interfaz. El estudio de los fenómenos interfaciales dio inicio a la ciencia de superficies, cuyo avance ha sido significativo en la medida en que aparecen nuevas y sofisticadas herramientas, tanto para la fabricación controlada de interfaces, como para la caracterización en el rango de la monocapa atómica. El interés se ha centrado no solo en el estímulo científico si no en el tecnológico, sobre todo en el contexto de los dispositivos electrónicos y, más recientemente, en una amplia gama de aplicaciones interdisciplinarias, como las biointerfaces, los detectores y actuadores ultrasensibles de última generación y el mejoramiento de las propiedades tribológicas. En este trabajo presentamos, primero, un contexto histórico de los diferentes fenómenos interfaciales que han ido surgiendo y su influencia en las propiedades que exhiben donde quiera que hay una interfaz, como en el caso de junturas, multicapas y heteroestructuras. Presentamos, asimismo, los avances en los sistemas de superredes magnéticas de importancia en el mejoramiento de la densidad de información de los discos duros, y discutimos sobre los estados interfaciales electrónicos y magnéticos y las nuevas funcionalidades en las interfaces de heterojunturas basadas en óxidos complejos. Por último, resaltamos algunos avances y perspectivas en el campo de la ciencia de superficies.

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“…19,20 Remarkable results of Pr-Co co-doped BFO thin films have shown potential for absorber and resonant devices21 ; whereas the Pr-doped BiFe 0.97 MnO 3 thin films have improved the ferroelectric and ferromagnetic response to 91.3 μC/cm 2 and 1.81 emu/cm 3 , respectively.However, there are no defects studies with Pr 3+ -Eu 3+ and Fe 3+ -Mn 2+ ions co-doping the A and B sites of the perovskite, respectively. Motived by the above results in this study, we explain in terms of point lattice defects the effect on the ferroelectric and AFM response of Eu-doped Bi 0.85 Pr 0.15-x Eu x Fe0 .97 Mn 0.03 O 3 (0, 0.01, 0.02, 0.03, 0.04, 0.05) thin films, where Eu 3+ ions use with comparable oxidation state to bismuth could reduce its oxidations state to 2+,22 besides the Pr 3+…”

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confidence: 99%

Vacancies' effect on the ferroelectric and magnetic response of Eu‐doped Bi_0.85Pr_0.15Fe_0.97Mn_0.03O₃ thin films

Ramirez‐DelaCruz

Kalu

Nathan‐Abutu

et al. 2023

Surface & Interface Analysis

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Polycrystalline‐multiferroic Bi0.85Pr0.15‐xEuxFe0.97Mn0.03O3 (0, 0.01, 0.02, 0.03, 0.4, 0.05) thin films were grown on fluorine‐doped tin oxide (FTO)/glass substrate with radio frequency (RF) magnetron sputtering. Rietveld quantitative analysis reveals that whereas the starting materials (nanoparticles [NPs] and ceramics) are composed of tetragonal P4italicmm symmetry, the thin films can lose 80% of this symmetry to become rhombohedral R3c symmetry. The structure evolution from tetragonal to rhombohedral symmetry indicates that the Eu3+ ion acts positively to reduce the tensile residual stress component from 24 to 1.8 MPa in the thin films. The band gap shifts to 2.17 eV by Eu substitution at the A‐site of the perovskite. Scanning electron microscopy (SEM) results show high‐elongated nanocrystals that share parallel facets without porosity. In that morphology, the Eu has a strong influence on reducing the magnetic coercivity from 10.7 to 6.5 kOe, which has been interpreted in terms of local shape anisotropy. Although the magnetic response increases monotonously, the ferroelectric polarization decreases with doping. These changes are explained through local defects created by the evolution of the VO·· concentration that changes significantly by Eu doping.

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Resistive switching in multiferroic BiFeO3 films: Ferroelectricity versus vacancy migration

Cited by 10 publications

References 25 publications

Ferroresistive Diode Currents in Nanometer-Thick Cobalt-Doped BiFeO₃ Films for Memory Applications

Ferroresistive Diode Currents in Nanometer-Thick Cobalt-Doped BiFeO₃ Films for Memory Applications

Fenómenos interfaciales en multicapas y superredes magnéticas: revisión y perspectivas

Vacancies' effect on the ferroelectric and magnetic response of Eu‐doped Bi_0.85Pr_0.15Fe_0.97Mn_0.03O₃ thin films

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Resistive switching in multiferroic BiFeO3 films: Ferroelectricity versus vacancy migration

Cited by 10 publications

References 25 publications

Ferroresistive Diode Currents in Nanometer-Thick Cobalt-Doped BiFeO3 Films for Memory Applications

Ferroresistive Diode Currents in Nanometer-Thick Cobalt-Doped BiFeO3 Films for Memory Applications

Fenómenos interfaciales en multicapas y superredes magnéticas: revisión y perspectivas

Vacancies' effect on the ferroelectric and magnetic response of Eu‐doped Bi0.85Pr0.15Fe0.97Mn0.03O3 thin films

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Ferroresistive Diode Currents in Nanometer-Thick Cobalt-Doped BiFeO₃ Films for Memory Applications

Ferroresistive Diode Currents in Nanometer-Thick Cobalt-Doped BiFeO₃ Films for Memory Applications

Vacancies' effect on the ferroelectric and magnetic response of Eu‐doped Bi_0.85Pr_0.15Fe_0.97Mn_0.03O₃ thin films