Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes

Dumas, C.; Deleruyelle, Damien; Demolliens, A.; Müller, Christophe; Spiga, S.; Cianci, E.; Fanciulli, M.; Tortorelli, I.; Bez, R.

doi:10.1016/j.tsf.2010.12.244

Cited by 12 publications

(10 citation statements)

References 22 publications

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“…16 A polycrystalline, 15-nm thick film of NiO was deposited by atomic layer deposition (ALD) at 300 C. Details about sample preparation and film microstructure were reported elsewhere. 16,17 Fig. 1 sketches the experimental setup used for CAFM measurements and enabling both topography and current mapping.…”

Section: Cafm Samples and Setupmentioning

confidence: 99%

“…20 electroforming (or shortly forming), namely, the formation of a CF by electrical breakdown in an originally high-resistivity NiO film, and reset, consisting of CF deactivation through electrically-induced diffusion and oxidation, 7,17 were possible under the same voltage tip polarity thanks to the unipolar character of switching in our NiO films. 16,17 A load resistance R L % 10 MX was used during forming to limit the maximum current thus avoiding tip degradation and CF overgrowth. 3,4 No load resistance was used during reset, to avoid voltage overshoot and unwanted breakdown.…”

Section: Cafm Samples and Setupmentioning

confidence: 99%

“…19 The central 0.6 Â 0.6 lm 2 depressed region, lying 20-30 nm below the surrounding area, is due to the dishing of W-plug during the chemical mechanical polishing (CMP) next to the via hole metal filling step. 16 Following the topographic scanning shown in Fig. 2(a), CFs were formed by applying voltage sweeps on the boron-doped diamond tip positioned over randomly chosen spots within the W-plug area.…”

Section: Forming Characteristicsmentioning

confidence: 99%

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Switching of nanosized filaments in NiO by conductive atomic force microscopy

Nardi

Deleruyelle

Spiga³

et al. 2012

Journal of Applied Physics

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Heteroepitaxial VO2 thin films on GaN: Structure and metal-insulator transition characteristics J. Appl. Phys. 112, 074114 (2012) Investigation of nonuniformity phenomenon in nanoscale SiO2 and high-k gate dielectrics J. Appl. Phys. 112, 064119 (2012) Strain dependent stabilization of metallic paramagnetic state in epitaxial NdNiO3 thin films Appl. Phys. Lett. 101, 132101 (2012) Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser deposition Appl.Resistive switching in binary metal oxides consists of conductivity changes originating from the electrical creation/dissolution of conductive filaments (CFs) at nanoscale. The investigation of CF local properties can only be achieved through physical and electrical studies at the scale of 10 nm or less, that is, the characteristic size of CFs. This work reports on the direct manipulation of individual CFs formed through insulating NiO films by conductive atomic force microscopy (CAFM) and the comparison between forming/reset processes induced by CAFM and those observed in large-area devices with the same NiO film. The switching variability due to local defects, such as grain boundaries and dislocations, is directly evidenced by CAFM during electroforming process. Our results also indicate that the forming voltage under CAFM can be significantly smaller than the one observed in large-area devices, thus providing evidence for the electric-field enhancement underneath the CAFM tip. Filament deactivation, or reset, at extremely low currents close to 100 nA is demonstrated and described in terms of electrode-limited CF. These results suggest that device engineering and CF size limitation may allow for a significant reduction of forming voltage and reset current in resistive switching random-access memory switching. V C 2012 American Institute of Physics. [http://dx.

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Section: Cafm Samples and Setupmentioning

confidence: 99%

Section: Cafm Samples and Setupmentioning

confidence: 99%

Section: Forming Characteristicsmentioning

confidence: 99%

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Switching of nanosized filaments in NiO by conductive atomic force microscopy

Nardi

Deleruyelle

Spiga³

et al. 2012

Journal of Applied Physics

Self Cite

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show abstract

“…Since RRAM memory elements can be integrated into Back-End Of Line (BEOL), this technology is of particular interest for high density storage with possibly multi-levels threedimensional architectures. Metal-organic complex-based RRAM [6], transition metal oxide (TMO) based Ox-RRAM [7,8] and chalcogenide-based CBRAM appear as promising candidates [9]. However, retention and endurance still remain to be demonstrated for CBRAM devices, while the high reset current is an issue in TMO-based memory devices.…”

Section: Memory Markets For Resistive Technologiesmentioning

confidence: 99%

“…Redox mechanisms can operate in the bulk I-layer, along conductive filaments formed within the I-layer, and/or at the I-layer/metal contact interfaces in MIM structure. The following sub-categories are proposed:  In "Fuse/anti-fuse" memories, the resistance switching is driven by local reduction/oxidation mechanisms leading to formation/dissolution of conductive filaments within a transition metal oxide [7,8,25,26]. Operations do not depend upon applied voltage polarity (unipolar switching).…”

Section: Phase Change Memories Pcmmentioning

confidence: 99%