Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

Jeon, Hosang; Park, Jingyu; Jang, Woochool; Kim, Hyun-Jung; Song, Hooyoung; Kim, Honggi; Seo, Hyungtak; Jeon, Hyeongtag

doi:10.1016/j.cap.2015.06.002

Cited by 18 publications

(8 citation statements)

References 23 publications

(29 reference statements)

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“…The CDT 60 s sample has the optimal endurance property, which can sustain SET/RESET times over 200 cycles. Compared with other studies that used similar material, the CDT 60 s sample exhibits good reliability [ 21 , 22 ]. The failure of ReRAM devices in an endurance cycle is caused by the Joule heating effect.…”

Section: Resultsmentioning

confidence: 95%

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

You

Lin

et al. 2018

Materials

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Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window (>106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology.

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Section: Resultsmentioning

confidence: 95%

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

You

Lin

et al. 2018

Materials

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“…As a result, many oxygen vacancies are trapped at the interface. Owing to the presence of oxygen vacancies, the mobility of Cu ions increases, and the ions move along the oxygen vacancies. , Along with oxygen deficiency, CFs grow vertically to the extent of the oxygen defects, and relatively thin filaments are formed in the solid electrolyte owing to the Ln-buffer layer (as shown in Figure a). Therefore, in this study, we investigate the morphology and the depth-dependent size of the CF formed in the Al 2 O 3 by I-AFM measurement.…”

Section: Resultsmentioning

confidence: 99%

Excellent Resistive Switching Performance of Cu–Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu–Se/Al₂O₃ Interface

Woo

Vishwanath

Jeon

2018

ACS Appl. Mater. Interfaces

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The next-generation electronic society is dependent on the performance of nonvolatile memory devices, which has been continuously improving. In the last few years, many memory devices have been introduced. However, atomic switches are considered to be a simple and reliable basis for next-generation nonvolatile devices. In general, atomic switch-based resistive switching is controlled by electrochemical metallization. However, excess ion injection from the entire area of the active electrode into the switching layer causes device nonuniformity and degradation of reliability. Here, we propose the fabrication of a high-performance atomic switch based on Cu -Se by inserting lanthanide (Ln) metal buffer layers such as neodymium (Nd), samarium (Sm), dysprosium (Dy), or lutetium (Lu) between the active metal layer and the electrolyte. Current-atomic force microscopy results confirm that Cu ions penetrate through the Ln-buffer layer and form thin conductive filaments inside the switching layer. Compared with the Pt/Cu -Se/AlO/Pt device, the optimized Pt/Cu -Se/Ln/AlO/Pt devices show improvement in the on/off resistance ratio (10-10), retention (10 years/85 °C), endurance (∼10 000 cycles), and uniform resistance state distribution.

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“…Several authors suggest that the formation of metallic filaments is helped by oxygen vacancies, favoring cation insertion inside the electrolyte under bias application 18,38 . Other studies have highlighted conducting paths made by a combination of metallic filaments (Cu, Ag) and oxygen vacancies 35,39,40 .…”

Section: Discussionmentioning

confidence: 99%

Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories

Mendes

Martínez

Ablett

et al. 2018

Sci Rep

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We report the chemical phenomena involved in the reverse forming (negative bias on top electrode) and reset of a TaN/TiTe/Al2O3/Ta memory stack. Hard X-ray photoelectron spectroscopy was used to conduct a non-destructive investigation of the critical interfaces between the electrolyte (Al2O3) and the TiTe top and Ta bottom electrodes. During reverse forming, Te accumulates at the TiTe/Al2O3 interface, the TiOx layer between the electrolyte and the electrode is reduced and the TaOx at the interface with Al2O3 is oxidized. These interfacial redox processes are related to an oxygen drift toward the bottom electrode under applied bias, which may favour Te transport into the electrolyte. Thus, the forming processes is related to both Te release and also to the probable migration of oxygen vacancies inside the alumina layer. The opposite phenomena are observed during the reset. TiOx is oxidized near Al2O3 and TaOx is reduced at the Al2O3/Ta interface, following the O2− drift towards the top electrode under positive bias while Te is driven back into the TiTe electrode.

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Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

Cited by 18 publications

References 23 publications

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Excellent Resistive Switching Performance of Cu–Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu–Se/Al₂O₃ Interface

Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories

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Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

Cited by 18 publications

References 23 publications

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Excellent Resistive Switching Performance of Cu–Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu–Se/Al2O3 Interface

Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories

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Excellent Resistive Switching Performance of Cu–Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu–Se/Al₂O₃ Interface