Resistive switching behavior in TiN/HfO&lt;inf&gt;2&lt;/inf&gt;/Ti/TiN devices

Walczyk, Damian; Bertaud, T.; Sowińska, M.; Lukosius, M.; Schubert, Markus Andreas; Fox, A.; Wolansky, D.; Scheit, A.; Fraschke, Mirko; Schoof, Gunter; Wolf, Ch.; Kraemer, Rolf; Tillack, Bernd; Korolevych, R.; Stikanov, Valeriy; Wenger, Christian; Schroeder, Thomas; Walczyk, Christian

doi:10.1109/iscdg.2012.6360035

Cited by 22 publications

(18 citation statements)

References 15 publications

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“…RRAM behavior is based on the possibility of electrically modifying the conductance of a Metal-Insulator-Metal (MIM) stack: the Set operation moves the cell in a low resistive state (LRS), whereas Reset brings the cell in a high resistive state (HRS) [4,5]. To activate such a switching behavior, some technologies require a preliminary Forming operation [6,7,8].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2

Grossi

Zambelli

Olivo

et al. 2017

Solid-State Electronics

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In this work, a comparison between 1T-1R RRAM arrays, manufactured either with amorphous or poly-crystalline Metal-InsulatorMetal cells, is reported in terms of performance, reliability, Set/Reset operations energy requirements, intra-cell and inter-cell variability during 10k endurance cycles and 100k read disturb cycles. The modeling of the 1T-1R RRAM array cells has been performed with two different approaches: i) a physical model like the Quantum Point Contact (QPC) model was used to find the relationship between the reliability properties observed during the endurance and the read disturb tests with the conductive filament properties; ii) a compact model to be exploited in circuit simulations tools which models the I-V characteristics of each memory cells technology.

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Section: Introductionmentioning

confidence: 99%

Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2

Grossi

Zambelli

Olivo

et al. 2017

Solid-State Electronics

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“…Among different oxides that show resistive switching properties, HfO 2 has presented a strong potential for the next generation of eNVMs due to its compatibility with Si-based complementary metal-oxidesemiconductor technology, high scalability, and low-energy dissipation. [2][3][4] Nonetheless, even though the resistance switching origin in bipolar HfO 2 -based RRAMs has been investigated and mainly attributed to the rupture and regeneration at the metal/oxide interface of oxygen vacancy conductive filaments (CFs) created during the electroforming process, [5][6][7][8] the poor memory performance still delays progress in RRAM development. 9 RRAM performance was improved thanks to the finding, which is based on the simulation of current-voltage (I-V) data that the size of the CFs (thus their resistance) can be controlled by tuning the voltage range 10 and/or the current compliance used during the forming/set operation.…”

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confidence: 99%

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells

Sowińska

Bertaud

Walczyk

et al. 2014

Journal of Applied Physics

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Articles you may be interested inResistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices J. Appl. Phys. 113, 064510 (2013); 10.1063/1.4791695In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard xray photoelectron spectroscopy Appl. Phys. Lett. 101, 143501 (2012) In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO 2 /TiN cells In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO 2 interface chemistry and physics of resistive switching Ti/HfO 2 /TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO 2 interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO 2 interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance. V C 2014 AIP Publishing LLC.

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“…RRAM behavior is based on the possibility of electrically modifying the conductance of a Metal-Insulator-Metal (MIM) stack: the Set operation switches the cell into a high conductive state, whereas Reset brings the cell back to a low conductive state. Some technologies like HfO 2 -based RRAM require a preliminary forming operation to activate such a switching behavior by creating a conductive filament (CF) in the dielectric material [5], [8]- [10]. Even if such forming process is performed just once, it plays a fundamental role in determining the system performance [10].…”

Section: Instabilitiesmentioning

confidence: 99%

“…In this work we will present a review of the most important issues retrieved during the electrical characterization of 4kbits RRAM memory array test structures with the associated control circuitry designed in a 0.25 µm BiCMOS technology node [5]. The results will show that some important reliability threats that could severely limit the ramp-up of the RRAM arrays toward a technology mature level, can be addressed by simply acting on the operative conditions of the cells within the array and on the algorithms that handle the read/write operations.…”

Section: Introductionmentioning

confidence: 99%

RRAM Reliability/Performance Characterization through Array Architectures Investigations

Zambelli

Grossi

Olivo

et al. 2015

2015 IEEE Computer Society Annual Symposium on VLSI

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The reliability and performance characterization of each non-volatile memory technology requires the thorough investigation of dedicated array test structures that mimic the real operations of a fully functional integrated product. This makes no exception also for emerging non-volatile memories like the Resistive Random Access Memory (RRAM) concept. An extensive electrical characterization activity performed on test vehicles manufactured in a CMOS backend-of-line process allowed the first glance estimation of operation modes and reliability threats typical of this technology. In this paper, it is provided a review of the most important issues like forming instabilities, optimal set/reset operation finding, and read disturb to provide a guideline either for a further technology optimization or an efficient algorithms co-design to handle these reliability/performance threats

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Resistive switching behavior in TiN/HfO<inf>2</inf>/Ti/TiN devices

Cited by 22 publications

References 15 publications

Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2

Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells

RRAM Reliability/Performance Characterization through Array Architectures Investigations

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