Residual stress improvement of platinum thin film in Au/Pt/Ti/p-GaAs ohmic contact by RF sputtering power

On-Chip Inductors with Self-Rolled-Up SiNx Nanomembrane Tubes: A Novel Design Platform for Extreme Miniaturization

“…15 SiN x and from >1000 MPa to < −1000 MPa for metal thin films on SiO 2 . 16,17 By carefully designing the residual stress mismatch in each layer, it is possible to generate a large enough driving force to overcome resistance and continue rolling over a long enough distance to roll into as many turns as needed. As long as the thin membrane is strained and can be released from its mechanical support, self-rolled-up 3D architectures will form spontaneously with simply planar processing, as has been demonstrated for compound and elemental semiconductor material systems as well metal and dielectric materials including SiN x .…”

“…When putting metal strips on the strained bilayer, the metal thin film itself can also provide additional tensile residual stress to help the rolling . Experimentally, thin films deposited by different methods or under different conditions have adjustable residual stresses in a wide range from 478 to −775.6 MPa for SiN x and from >1000 MPa to < −1000 MPa for metal thin films on SiO 2 . , By carefully designing the residual stress mismatch in each layer, it is possible to generate a large enough driving force to overcome resistance and continue rolling over a long enough distance to roll into as many turns as needed. As long as the thin membrane is strained and can be released from its mechanical support, self-rolled-up 3D architectures will form spontaneously with simply planar processing, as has been demonstrated for compound and elemental semiconductor material systems as well metal and dielectric materials including SiN x . , The curvature of self-rolled-up tubes is determined by the thickness and inversely proportional to the net strain in the membrane.…”

“…Because the distance between the metal layers of each turn is very small (Δ R ∼ 40 nm), the adjacent metal layers are not equipotential under high frequency operation and therefore the crosstalk capacitance cannot be neglected. , We use the sum of all overlap capacitances in the equivalent structure to represent the crosstalk distribution capacitance C c = (2πε SiN w s )/(ln[1 + ( t SiN ( N t – 1))/( R 1 )]), which can be approximated, similar to that of coaxial capacitor. Substrate parasitic capacitance C s of one cell is approximately proportional to the projection area on the substrate by the metal spirals and connection lines.…”

Fabrication Process Study of Silicon Nitride Passivation Layer on GaAs Substrate at Low Temperature

“…氮 化 硅 薄 膜 由 于 优 良 的 物 理 化 学 稳 定 性 、 电 学 性 能 、 光 学 性 能 以 及 良 好 的 绝 缘 性 已 被 广 泛 地 应 用 于 太 阳 能 电 池 、 光 电 子 和 微 电 子 等 领 域 中 。 在 实 际 应 用 中 ， 氮 化 硅 薄 膜 可 作 为 掩 膜 、 绝 缘 层 和 钝 化 层 等 。 例 如 ， 在太阳能电池领域中， 氮化硅薄膜被用作减反射材料和钝化材料 [1][2][3][4] 。在微机电系统(MEMS)领域中， 氮化硅 薄膜则被用作器件的结构材料、 敏感材料和掩蔽层 [5][6] 。在薄膜晶体管液晶显示(TFT-LCD)领域， 氮化硅薄 膜 则 被 用 作 为 TFT-LCD 的 栅 绝 缘 层 材 料 [7][8][9][10][11][12] 。 在 AlGaAs 半 导 体 激 光 器 中 ， 氮 化 硅 薄 膜 可 以 被 用 作 很 好 的 钝 化 层 。 与 常 用 的 SiO2 薄 膜 相 比 ， 氮 化 硅 薄 膜 具 有 更 高 的 导 热 系 数 和 更 好 的 散 热 效 果 ， 从 而 可 以 降 低 器 件 因散热问题而引起的失效 [13] 。 目前， 制备氮化硅薄膜的方法主要有热分解法， 直接氮化法， 低压化学气相沉积 [14] (LPCVD)和等离子增 强 化 学 气 相 沉 积 (PECVD)， 此 外 还 有 蒸 发 镀 膜 和 溅 射 镀 膜 法 [15][16][17] 。 蒸 发 和 溅 射 法 所 沉 积 的 氮 化 硅 薄 膜 组 织 [18][19] [20] 。 在 AlGaAs 半导体激光器制作流程中， 氮化硅薄膜沉积到 GaAs 和 AlGaAs 表面后， 还要经过光刻、 刻蚀、 金属沉 积、 研磨抛光及高温退火等很多步工艺 [21][22] 。如果在沉积时氮化硅薄膜有较高的残余应力， 那么在后续的加…”

Impact of Film Stress and Film Thickness Process Control on GaAs-TiAu Metal Adhesion

“…Previous reports of thin metal film adhesion failure have examined the impact of film stress relief and surface disruptions as an adhesion-loss failure mechanism [8,9]. It is also well known that the residual stress of sputter-deposited metal films can frequently be minimized by optimizing deposition parameters [10][11][12]. Based on this information and our process observations and experience, we theorized that competing Ti and Au film stresses are the source of a post-deposition change in wafer bow which negatively impacts the deposited metal surface.…”