Replacing copper interconnects with graphene at a 7-nm node

Wang, Ning C.; Sinha, Saurabh; Cline, Brian; English, Chris; Yeric, Greg; Pop, Eric

doi:10.1109/iitc-amc.2017.7968949

Cited by 28 publications

(18 citation statements)

References 9 publications

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“…[4][5][6][7][8][9][10] In order to be integrated into planar circuitry, as conductive interconnections [11][12][13] or active channels, the graphene film has to be patterned into narrow ribbons with controlled width and precise spatial arrangement. [14][15][16][17] Usually, graphene nanoribbons (GNRs) of tens of nanometers wide are etched out of graphene monolayer, by using sophisticated electron beam lithography (EBL), 18 which is unfortunately too expansive to implement for large-scale flexible electronics. In contrast, selfassembly GNRs can be synthesized from molecules in solution environment, 19,20 by unzipping multi-walled carbon nanotubes 21 or by reducing graphene oxide flakes, 22 which provide promising approaches to fabricate nearly perfect GNR segments.…”

Section: Introductionmentioning

confidence: 99%

Highly stretchable graphene nanoribbon springs by programmable nanowire lithography

et al. 2019

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Graphene nanoribbons are ideal candidates to serve as highly conductive, flexible, and transparent interconnections, or the active channels for nanoelectronics. However, patterning narrow graphene nanoribbons to <100 nm wide usually requires inefficient micro/nano fabrication processes, which are hard to implement for large area or flexible electronic and sensory applications. Here, we develop a precise and scalable nanowire lithography technology that enables reliable batch manufacturing of ultra-long graphene nanoribbon arrays with programmable geometry and narrow width down to~50 nm. The orderly graphene nanoribbons are patterned out of few-layer graphene sheets by using ultra-long silicon nanowires as masks, which are produced via in-plane solid-liquid-solid guided growth and then transferred reliably onto various stiff or flexible substrates. More importantly, the geometry of the graphene nanoribbons can be predesigned and engineered into elastic two-dimensional springs to achieve outstanding stretchability of >30%, while carrying stable and repeatable electronic transport. We suggest that this convenient scalable nanowire lithography technology has great potential to establish a general and efficient strategy to batch-pattern or integrate various two-dimensional materials as active channels and interconnections for emerging flexible electronic applications.

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Section: Introductionmentioning

confidence: 99%

Highly stretchable graphene nanoribbon springs by programmable nanowire lithography

et al. 2019

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“…This paper is focused on the research and development of novel high-performance on-chip interconnections for next-generation ICs. Super-and nanoconductors, radio frequency and optical commutation lines, carbon nanotubes, and graphene are the promising types of advanced integrated interconnections [2][3][4][5]. However, optical interconnecting is characterized by some important advantages over its counterparts and can solve the problem for various integrated devices in the immediate future [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Pisarenko

Ryndin

2019

Electronics

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In this paper, we address the problem of research and development of the advanced optoelectronic devices designed for on-chip optical interconnections in integrated circuits. The development of the models, techniques, and applied software for the numerical simulation of carrier transport and accumulation in high-speed AIIIBV (A and B refer to group III and V semiconductors, respectively) optoelectronic devices is the purpose of the paper. We propose the model based on the standard drift-diffusion equations, rate equation for photons in an injection laser, and complex analytical models of carrier mobility, generation, and recombination. To solve the basic equations of the model, we developed the explicit and implicit techniques of drift-diffusion numerical simulation and applied software. These aids are suitable for the stationary and time-domain simulation of injection lasers and photodetectors with various electrophysical, constructive, and technological parameters at different control actions. We applied the model for the simulation of the lasers with functionally integrated amplitude and frequency modulators and uni-travelling-carrier photodetectors. According to the results of non-stationary simulation, it is reasonable to optimize the parameters of the lasers-modulators and develop new construction methods aimed at the improvement of photodetectors’ response time.

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“…2, we show the resistivity of 7 nm diameter MWCNT with lengths up to 10 µm while varying N c . We compare the resistivity of copper (Cu) lines with line widths of 22, 14, 10 and 7 nm [33]. We observe that doping improves CNT resistivity and achieves even lower resistivity than pristine CNTs and Cu lines.…”

Section: Electrical Rc Modelmentioning

confidence: 99%

Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

Liang

Chen

Ramos

et al. 2019

IEEE Trans. Electron Devices

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In this paper, we investigate by combining electrical measurements with an atomistic-to-circuit modeling approach, the conductance of doped stand-alone multi-wall carbon nanotubes (MWCNTs) as a viable candidate for the next-generation of back-end-of-line (BEOL) interconnects. Ab-initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90% by converting semiconducting shells to metallic. Electrical measurements of Pt-salt doped CNTs provide up to 50% of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs. Index Terms-Carbon nanotube, defective CNTs, doped CNTs, local on-chip interconnects, individual CNT growth, doping process of CNT, CNT contact resistance.

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Replacing copper interconnects with graphene at a 7-nm node

Cited by 28 publications

References 9 publications

Highly stretchable graphene nanoribbon springs by programmable nanowire lithography

Highly stretchable graphene nanoribbon springs by programmable nanowire lithography

Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

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