Remarkable Rashba spin splitting induced by an asymmetrical internal electric field in polar III–VI chalcogenides

Abstract

The Rashba spin splitting of polar group III–VI chalcogenides XABY (A, B = Ga, In; X ≠ Y = S, Se, Te) monolayer is investigated based on the density functional theory.

A study of the Rashba effect in two-dimensional ternary compounds ABC monolayers (A = Sb, Bi; B = Se, Te; C = Br; I)

“…Among them, the Rashba coefficient of BiSeI monolayer (1.84 eV Å) is the largest, which is much greater than that of the Janus structures WSeTe (0.92 eV Å) 49 and SeInGaTe (0.67 eV Å). 14 However, we must recognize that it is smaller than the bulk material BiTeI (3.8 eV Å). 46 Next, as a representative, we will emphatically discuss the case of the BiSeI monolayer and the related diagrammatic drawings are plotted in Fig.…”

“…13 We investigated the Janus III–VI chalcogenides XABY (A, B = Ga, In; X, Y = S, Se, and Te) monolayers in a previous work and found that a remarkable RSS could be induced by mirror symmetry breaking at the conduction band minimum (CBM). 14…”

A first principles study of a van der Waals heterostructure based on MS2 (M = Mo, W) and Janus CrSSe monolayers

“…For both models of MS 2 -CrSSe systems, The absence of mirror-symmetry in Janus 2D materials results in different polarization effects, which helps to understand the intrinsic electronic and extrinsic photocatalytic behavior of the materials. [70][71][72][73] The plane-averaged electrostatic potential of all MS 2 -CrSSe heterobilayers for both models is calculated and plotted in Fig. 6(a-d).…”

Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga2SSe monolayer

“…Recently, due to the large band gap, good carrier mobility, high stability, and ease of manufacturing, 12 group III–VI monolayers with the chemical formula of MX (M = In, Ga; X = Se, S, Te) have attracted great interest in nanodevices, 13,14 spintronics, 15,16 thermoelectricity, 17,18 optoelectronics, 19,20 photodetectors, 21,22 as well as catalysts. 23,24 Recently, the GaSe monolayer has been experimentally fabricated from the exfoliation of its bulk phase, 25,26 which exhibits excellent infrared-to-ultraviolet tunable optical activity and tunable electronic character.…”