Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Meneghesso, G.; Verzellesi, Giovanni; Danesin, F.; Rampazzo, F.; Zanon, Franco; Tazzoli, Augusto; Meneghini, Matteo; Zanoni, Enrico

doi:10.1109/tdmr.2008.923743

Cited by 582 publications

(327 citation statements)

References 42 publications

Supporting

Mentioning

295

Contrasting

Unclassified

Order By: Relevance

“…11 and 43) should be observed for the impact ionization induced at the gate edge. Meneghesso et al 11 used the ratio of gateedge EL intensity to drain current (Intensity EL /I DS ) to quantify the impact ionization coefficient. For the reciprocal of the electric field, they used 1/(V DS -V DSAT ) assuming that gate-edge depletion width is the same for different V DS , where V DSAT is the drain saturation voltage.…”

Section: E Trapping Mechanism Of Non-localized Hot Electronsmentioning

confidence: 99%

“…10 Following this understanding, regarding the reliability of AlGaN/ GaN HFETs, degradation at the gate edge has been recognized as the only degradation mechanism regardless of whether onstress or off-stress is applied. [11][12][13][14] In short, the reported trapping and degradation mechanisms of AlGaN/GaN HFETs have mainly focused on the gate edge. Actually, this is reasonable since the highest electric field always exists there regardless of the type of stress.…”

Section: Introductionmentioning

confidence: 99%

“…11 They then carried out two-dimensional (2D) numerical device simulations to support this hypothesis. 15 Sometimes, such non-localized trapping effects can even shift the peak of the electroluminescence distribution from the gate edge to the drain edge of an AlGaN/GaN HFET under on-state operation.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Hu¹,

Hashizume²

2012

Journal of Applied Physics

View full text Add to dashboard Cite

Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors Appl. Phys. Lett. 100, 223504 (2012) Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer Appl. Phys. Lett. 100, 223502 (2012) Charge transport and trap characterization in individual GaSb nanowires J. Appl. Phys. 111, 104515 (2012) The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors Appl. Phys. Lett. 100, 222901 (2012) Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor J. Appl. Phys. 111, 104513 (2012) Additional information on J. Appl. Phys. For AlGaN/GaN heterojunction field-effect transistors, on-state-bias-stress (on-stress)-induced trapping effects were observed across the entire drain access region, not only at the gate edge. However, during the application of on-stress, the highest electric field was only localized at the drain side of the gate edge. Using the location of the highest electric field as a reference, the trapping effects at the gate edge and at the more distant access region were referred to as localized and non-localized trapping effect, respectively. Using two-dimensional-electron-gas sensing-bar (2DEG-sensing-bar) and dual-gate structures, the non-localized trapping effects were investigated and the trap density was measured to be $1.3 Â 10 12 cm À2 . The effect of passivation was also discussed. It was found that both surface leakage currents and hot electrons are responsible for the non-localized trapping effects with hot electrons having the dominant effect. Since hot electrons are generated from the 2DEG channel, it is highly likely that the involved traps are mainly in the GaN buffer layer. Using monochromatic irradiation (1.24-2.81 eV), the trap levels responsible for the non-localized trapping effects were found to be located at 0.6-1.6 eV from the valence band of GaN. Both trap-assisted impact ionization and direct channel electron injection are proposed as the possible mechanisms of the hot-electron-related non-localized trapping effect. Finally, using the 2DEG-sensing-bar structure, we directly confirmed that blocking gate injected electrons is an important mechanism of Al 2 O 3 passivation. V C 2012 American Institute of Physics.

show abstract

Section: E Trapping Mechanism Of Non-localized Hot Electronsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Hu¹,

Hashizume²

2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…[1][2][3] However, the device reliability is still an issue. 4 The electrical property of GaN buffer layer (GaN BL) in the HEMT structure is one of the critical parameters that will influence the final device reliability. [4][5][6] Firstly, the GaN BL has to be semi-insulating (SI) to prevent unwanted current paths underneath the two-dimensional electron gas (2DEG) channel and also to obtain high breakdown voltage with low leakage current.…”

mentioning

confidence: 99%

“…4 The electrical property of GaN buffer layer (GaN BL) in the HEMT structure is one of the critical parameters that will influence the final device reliability. [4][5][6] Firstly, the GaN BL has to be semi-insulating (SI) to prevent unwanted current paths underneath the two-dimensional electron gas (2DEG) channel and also to obtain high breakdown voltage with low leakage current. One effective way to achieve this is to introduce acceptor-like impurities, like iron 7 or carbon, [8][9][10] during growth of the GaN BL; however, iron doping has a memory effect rendering doping profile difficult to control.…”

mentioning

confidence: 99%

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Chen

Forsberg

Janzén

2013

Applied Physics Letters

View full text Add to dashboard Cite

High tuneability of residual carbon doping is developed in a hot-wall metalorganic chemical vapor deposition reactor. Two orders of temperature-tuned carbon concentration, from ∼2 × 1018 cm−3 down to ∼1 × 1016 cm−3, can be effectively controlled in the growth of the GaN buffer layer. Excellent uniformity of two-dimensional electron gas (2DEG) properties in AlxGa1−xN/AlN/GaN heterostructure with very high average carrier density and mobility, 1.1 × 1013 cm−2 and 2035 cm2/V·s, respectively, over 3" semi-insulating SiC substrate is realized with the temperature-tuned carbon doping scheme. Reduction of carbon concentration is evidenced as a key to achieve high 2DEG carrier density and mobility

show abstract

Role of Electric Field, Defects and Radiation Damage in Determining Reliability in AlGaN/GaN High Electron Mobility Transistors

Whiting¹,

Pearton²,

Jones³

et al. 2015

TMS2015 Supplemental Proceedings

View full text Add to dashboard Cite

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Cited by 582 publications

References 42 publications

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Role of Electric Field, Defects and Radiation Damage in Determining Reliability in AlGaN/GaN High Electron Mobility Transistors

Contact Info

Product

Resources

About