Reliability of black phosphorus field-effect transistors with respect to bias-temperature and hot-carrier stress

Illarionov, Yu. Yu.; Waltl, Michael; Tech, M.; Kim, J.-S.; Akinwande, Deji

doi:10.1109/irps.2017.7936338

2017 IEEE International Reliability Physics Symposium (IRPS) 2017

DOI: 10.1109/irps.2017.7936338

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Reliability of black phosphorus field-effect transistors with respect to bias-temperature and hot-carrier stress

Yu. Yu. Illarionov

Michael Waltl

M. Tech

et al.

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2023

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Reliability of black phosphorus field-effect transistors with respect to bias-temperature and hot-carrier stress

Cited by 1 publication

References 30 publications

Negative-Bias-Stress-Induced Current Instability in Quasi-2D Tellurium Field-Effect-Transistors

Negative-Bias-Stress-Induced Current Instability in Quasi-2D Tellurium Field-Effect-Transistors

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