Reliability Aspects of Microsystems for Automotive Applications

Müller-Fiedler, Roland; Nötzold, Kerstin; Schneider, Andreas; Rank, Holger; Graf, Juergen

doi:10.1002/adem.200800290

Cited by 2 publications

(3 citation statements)

References 12 publications

(10 reference statements)

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“…The Q-values measured at 25°C were used as a reference for all curves. The measured values matched within a maximum discrepancy of 8% (DETF 6) to the theoretical predicted values using the dependency of Q from absolute temperature given in equation [3]. The obtained results confirm that there seems to be no other dominating temperature influence to the quality factors as the proposed one.…”

Section: Q(detf 6)/q(detf 3)-1 (23 Pairs) Mean Valuesupporting

confidence: 77%

“…Hence, energy dissipation of the resonators should be dominated by gas damping in the investigated temperature range and the encapsulated pressure regime. Also with this kind of experiment the used sealing has been proven to be hermetic, otherwise the assumed proportionality of the enclosed pressure to temperature in equation [3] would have failed. As stated at the beginning it was intended to develop a resonator structure to monitor the inside cavity pressure after the encapsulation process.…”

Section: Table II Difference In Measuredmentioning

confidence: 99%

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Novel Test Structures for Hermeticity Testing of Wafer Bonding Technologies

et al. 2010

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Many Micro-Electro-Mechanical System (MEMS) devices such as gyroscopes, accelerometers, infrared uncooled arrays, radio frequency (RF) resonators etc. require vacuum packaging. In this paper novel MEMS resonators designed as double ended tuning forks (DETF) with pressure sensitive quality factor are presented. The study of different DETF-designs clearly identified the strucutres' ability to monitor the inside cavity pressure of hermetically sealed micro packages. Therefore a new test vehicle for the development and long-time reliability of hermetic wafer bonding technologies can be provided.

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Section: Q(detf 6)/q(detf 3)-1 (23 Pairs) Mean Valuesupporting

confidence: 77%

Section: Table II Difference In Measuredmentioning

confidence: 99%

Novel Test Structures for Hermeticity Testing of Wafer Bonding Technologies

et al. 2010

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“…2. Due to the small critical value of G c for a crack running in the plane of the lead precipitations (Boettge et al 2008;Müller-Fiedler et al 2009), i.e. a strong deflection of the crack at low temperatures causes that the fracture occurs partially more often in the plane of the lead precipitations.…”

Section: Alternating Versus Interfacial Crack Pathmentioning

confidence: 99%

Temperature dependent fracture toughness of glass frit bonding layers

et al. 2010

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Glass frit bonding is an important technology for the hermetical encapsulation of microsensors. During manifactiring processes and in application the bonding layer is repeatedly exposed to temperature changes. Therefore a meaningful stability assessment must consider possible temperature dependent fracture toughness parameters. This work shows that the influence of temperature changes on the fracture toughness depends on whether the bonding layer is subjected to externally pure tensile or combined tensile and shear loading. The reasons for this effect are discussed by use of finite element simulations. Two different kinds of cracks are compared with regard to the residual stresses that result from the wafer bonding process. These residual stresses have a high influence on the loading conditions at the crack tip, when the crack is kinking into the glass frit material. However, the influence of residual stresses on an interfacial crack that propagates parallel to the plan e of the bonding layer is almost negligible

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Reliability Aspects of Microsystems for Automotive Applications

Cited by 2 publications

References 12 publications

Novel Test Structures for Hermeticity Testing of Wafer Bonding Technologies

Novel Test Structures for Hermeticity Testing of Wafer Bonding Technologies

Temperature dependent fracture toughness of glass frit bonding layers

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