Relationship between dislocation density and nucleation of multicrystalline silicon

Grain control in directional solidification of photovoltaic silicon

“…The grains and grain boundaries have been found to have a profound effect on the wafer quality, and so as the energy conversion efficiency of the mc-Si solar cells [2][3][4][5][6]. More interestingly, the grain orientations, the grain boundaries, and the dislocation density are closely related, and they play a crucial role on the wafer properties [4][5][6][7][8].…”

“…More interestingly, the grain orientations, the grain boundaries, and the dislocation density are closely related, and they play a crucial role on the wafer properties [4][5][6][7][8]. Grain boundaries could lead to different mechanical and electrical characteristics under different orientations [2][3]9].…”

Arrangement of dendrite crystals grown along the bottom of Si ingots using the dendritic casting method by controlling thermal conductivity under crucibles

“…Thus, the density of grain boundaries that act as recombination centers of photocarriers [4][5][6] is decreased with the use of dendrite crystals. It was proven by the other research groups that our concept is useful in obtaining structure-controlled Si multicrystalline ingots [7,8]. Solar cells with a high conversion efficiency have been obtained by Sharp using large scale wafers cut from several ingots prepared by the dendritic casting method.…”

The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed

“…This depends on the orientation of the crystal [12]. However, dislocations and twin boundary is generated due to the stress caused by the temperature gradient during the crystal growth and cooling period of ingot.…”