2018
DOI: 10.1002/smll.201703044
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Regulation of Charge Carrier Dynamics in ZnO Microarchitecture‐Based UV/Visible Photodetector via Photonic‐Strain Induced Effects

Abstract: A feasible, morphological influence on photoresponse behavior of ZnO microarchitectures such as microwire (MW), coral-like microstrip (CMS), fibril-like clustered microwire (F-MW) grown by one-step carrier gas/metal catalyst "free" vapor transport technique is reported. Among them, ZnO F-MW exhibits higher photocurrent (I ) response, i.e., I > I > I . The unique structural alignment of ZnO F-MW has enhanced the I from 14.2 to 186, 221, 290 µA upon various light intensities such as 0 to 6, 11, 17 mW cm at λ . H… Show more

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Cited by 31 publications
(23 citation statements)
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“…Under bias voltage of ±1 V to Y-OF, illumination of light ( λ 365 nm ) at an intensity of 24 mW/cm 2 (UV-ON) exhibits an ohmic behavior at Au/ZnO/Au interfaces with an increase in dark current ( I D ~40 nA) to the photocurrent ( I ph ) of ~18.36 μA (Fig. 2a) 22,23 . Further, Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Under bias voltage of ±1 V to Y-OF, illumination of light ( λ 365 nm ) at an intensity of 24 mW/cm 2 (UV-ON) exhibits an ohmic behavior at Au/ZnO/Au interfaces with an increase in dark current ( I D ~40 nA) to the photocurrent ( I ph ) of ~18.36 μA (Fig. 2a) 22,23 . Further, Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, the energy harvesters are performing some real-time applications by integrating it with battery or other storage devices. Apart from energy harvesting, these NG can work as a self-powered sensors such as pH sensors [19], glucose sensors [20], chemical sensors [21], humidity sensors [22,23], temperature sensors [24], air pressure sensors [25], motion sensor [26], optical sensor [27,28], and strain sensors [29]. To enhance the output power of the TENG devices, researchers across the globe performed the hybridization of these devices and studied the possibility of its use in extensive applications.…”
Section: Introductionmentioning
confidence: 99%
“…Under thermal equilibrium, the Φ at both the contacts will be similar, that is Φ 1 = Φ 2 , as depicted in Figure S2 in the Supporting Information. However, with applied strain, a piezoelectric potential is generated, resulting in Φ at both the contacts will change . This change in the Φ height depends on the magnitude of applied strain and thus, with increasing the strain, the I – V characteristics changes toward the nonlinearity, as noticed in Figure S1 in the Supporting Information.…”
mentioning
confidence: 96%
“…The possible reason behind this observation could be the change in bandgap and/or available carrier density under the strain. This is explained in detail at the end of this section . Once the strain is swept from compressive to tensile regions, the dark current can be effectively modulated from “low” to “high”, as presented in Figure S5 in the Supporting Information.…”
mentioning
confidence: 97%
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