As a "clean" tool, external strain has been widely used to fine-tune the crystal structure and physical properties of a given material, especially for the layered system. Here, by using first-principles calculations, we reveal that bulk PtSe 2 exhibits favorable ferroelasticity, as evidenced by a 90°lattice rotation with a moderate switching barrier when a uniaxial compressive strain is applied along the layer-stacking direction. Besides, both the hole mobility and the lattice thermal conductivity show strong anisotropy, where the in-plane values are extremely higher than those along the out-of-plane direction. As a consequence, one can realize precise control of the electronic and phonon transport in PtSe 2 by leveraging its ferroelastic properties.