volume 15, issue 9, P1248-1251 1985
DOI: 10.1070/qe1985v015n09abeh007702
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Abstract: Experimental wide-band-gap emitter transistors fabricated by the thin-film deposition of CdS on to Si are described. It is practically demonstrated that the resulting non-epitaxial junction between the CdS and Si does not inhibit the successful working of the transistors. Common emitter current gains of up to 80 were obtained with some devices. The magnitude of the gain and the gain-current level behaviour of the devices is explained in terms of interface transmission and recombination currents. High-gain exp…

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