2012
DOI: 10.1016/j.microrel.2012.07.008
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Reduction of annealed-induced wafer defects in dual-damascene copper interconnects

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Cited by 7 publications
(1 citation statement)
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“…Several researchers also used modified abrasive particles and various dispersants to reduce the surface scratches. [27][28] In this study, a kind z E-mail: cwtjy206@163.com of dispersant agent was applied to reduce the scratches on the copper surface during CMP. Firstly, the defect map and scratch counts as a function of dispersant were studied by using defect scan tool and scanning electron microscope (SEM) reviewer, the relationship between dispersant agent and particle size distribution (PSD) of the slurry was studied, the zeta potential of the slurry as a function of EDA concentration was also studied, then the effect of dispersant agent on large particle counts and wettability of the slurry was investigated, and the mechanism for scratch reduction was also discussed.…”
mentioning
confidence: 99%
“…Several researchers also used modified abrasive particles and various dispersants to reduce the surface scratches. [27][28] In this study, a kind z E-mail: cwtjy206@163.com of dispersant agent was applied to reduce the scratches on the copper surface during CMP. Firstly, the defect map and scratch counts as a function of dispersant were studied by using defect scan tool and scanning electron microscope (SEM) reviewer, the relationship between dispersant agent and particle size distribution (PSD) of the slurry was studied, the zeta potential of the slurry as a function of EDA concentration was also studied, then the effect of dispersant agent on large particle counts and wettability of the slurry was investigated, and the mechanism for scratch reduction was also discussed.…”
mentioning
confidence: 99%