Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars

Guo, Jingwei; Hu, Shengdong; Wang, Jianan; Guo, Gang; Liu, Chang; Han, Yi; Ran, Shenglong

doi:10.1016/j.rinp.2020.103254

Cited by 12 publications

(6 citation statements)

References 11 publications

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“…Recently, amorphous materials have shown attractive advantages in heterocatalysis due to the flexible coordination feature, [38,39] while their low-dimensionally confined synthesis remains extremely challenging. Here we report a successfully synthesis of ultrathin crystalline/amorphous biphase Pd@PdRh core-shell-like nanosheets, denoted as c/a-Pd@PdRh NSs, to server as excellent ORR electrocatalysts for disentangling the activity-stability trade-off.…”

Section: Introductionmentioning

confidence: 99%

Biphase Pd Nanosheets with Atomic‐Hybrid RhO_x/Pd Amorphous Skins Disentangle the Activity‐Stability Trade‐Off in Oxygen Reduction Reaction

Lyu,

Cai,

Zhang

et al. 2024

Advanced Materials

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The activity‐stability trade‐off relationship of oxygen reduction reaction (ORR) is a tricky issue that strikes the electrocatalyst population and hinders the widespread application of fuel cells. Here we develop neoteric biphase Pd nanosheets that are structured with ultrathin 2D crystalline Pd inner cores and ∼1 nm‐thin atomic‐hybrid RhOx/Pd amorphous skins, named c/a‐Pd@PdRh NSs, for disentangling this trade‐off dilemma for alkaline ORR. The superthin amorphous skins significantly amplify the quantity of flexibly low‐coordinated atoms for electrocatalysis. An in‐situ selected oxidation of the top‐surface Rh dopants creates atomically hybrid RhOx/Pd disorder surfaces. Detailed energy spectra and theoretical simulation confirm that these RhOx/Pd interfaces can arouse a surface charge redistribution, causing significant electron deficiency and lowered d‐band center for surface Pd. Meanwhile, anti‐corrosive Rh/RhOx species can thermodynamically passivate the neighboring Pd atoms from oxidative dissolution. Thanks to these amplified interfacial effects, the biphase c/a‐Pd@PdRh NSs simultaneously exhibit a superhigh ORR activity (5.92 A mg−1, 22.8 times that of Pt/C) and an outstanding long‐lasting stability after 100k cycles of accelerated durability test, showcasing unprecedented electrocatalysts for breaking the activity‐stability trade‐off relationship of ORR. This work paves a bran‐new strategy for designing high‐performance electrocatalysts through creating modulated amorphous skins on low‐dimensional nanomaterials.This article is protected by copyright. All rights reserved

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Section: Introductionmentioning

confidence: 99%

Biphase Pd Nanosheets with Atomic‐Hybrid RhO_x/Pd Amorphous Skins Disentangle the Activity‐Stability Trade‐Off in Oxygen Reduction Reaction

Lyu,

Cai,

Zhang

et al. 2024

Advanced Materials

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“…However, it has a weak assisted depletion effect on the drift region [15,16]. In addition, multiple gates can also help reduce R on,sp by increasing additional current path [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD simulation study

Guo,

Dai,

Wang

et al. 2024

Semicond. Sci. Technol.

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In this paper, a novel double-gate trench silicon-on-insulator (SOI) lateral double-diffused metal oxide semiconductor field-effect transistor (LDMOS) with double-dielectric material (DGDK-LDMOS) is proposed. DGDK-LDMOS has two dielectric materials: a reverse-L-shaped high-k (HK) thin film and an low-k (LK) buried oxide layer. The HK thin film optimizes the electric field distribution on the drift region surface, attracting electric flux, and the excellent withstand voltage of the LK buried oxide layer can significantly improve the breakdown voltage (BV) and reduce specific on-resistance (Ron,sp) of the device. The modulation mechanism of LDMOS by HK thin film and LK buried oxide layer is analyzed. The results show that compared with conventional LDMOS (C-LDMOS), when the permittivity of HK thin film is 25 and the permittivity of LK buried oxide is 3, the BV of DGDK-LDMOS is increased by 89.6%, the Ron,sp is decreased by 26.4%, and the figure of merit (FOM, FOM = BV2/Ron,sp) is increased by 397.2% from 3.6 MW·cm−2 to 17.9 MW·cm−2. Meanwhile, the output characteristics, transfer characteristics, lattice temperature, AC characteristics and switching characteristics of DGDK-LDMOS are also discussed and compared.

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“…Recent studies on electron accumulation effect have considered the enhancement of BV. References [10][11][12] introduced highly doped N-pillars on the surface of the drift region and formed electron accumulation layers to reduce R on,sp , as well as enhancing BV by RESURF principle. However, it is difficult to fully balance the charges between the P/N pillars.…”

Section: Introductionmentioning

confidence: 99%

Study of ultra-low specific on-resistance and high breakdown voltage SOI LDMOS based on electron accumulation effect

Lyu,

Dai,

Wang

et al. 2023

Eng. Res. Express

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A novel stepped L-shaped trench gate silicon-on-insulator (SOI) lateral double-diffused metal oxide semiconductor field-effect transistor (LDMOS) with N-pillar (SLTGN-LDMOS) is proposed. SLTGN-LDMOS contains a highly doped N-pillar, assisting in reducing the specific on-resistance (Ron,sp). The stepped L-shaped trench gate (SLTG) attracts electrons to attach to the edge of the trench, thus directing more current to flow along the edge, which decreases Ron,sp effectively. Furthermore, new electric field peaks are generated on the surface of the drift region, thus increasing the breakdown voltage (BV). As a result, compared with the conventional structure (C-LDMOS), the BV of SLTGN-LDMOS increases from 63 V to 162.7 V, and the Ron,sp decreases from 1.85 mΩ·cm2 to 1.46 mΩ·cm2. Then, the figure of merit (FOM1, BV2 / Ron.sp) increases remarkably from 2.15 MW/cm2 to 18.13 MW/cm2. In addition, the maximum surface temperature of SLTGN-LDMOS is 395.3 K, slightly lower than the 398.7 K of C-LDMOS.

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Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars

Cited by 12 publications

References 11 publications

Biphase Pd Nanosheets with Atomic‐Hybrid RhO_x/Pd Amorphous Skins Disentangle the Activity‐Stability Trade‐Off in Oxygen Reduction Reaction

Biphase Pd Nanosheets with Atomic‐Hybrid RhO_x/Pd Amorphous Skins Disentangle the Activity‐Stability Trade‐Off in Oxygen Reduction Reaction

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD simulation study

Study of ultra-low specific on-resistance and high breakdown voltage SOI LDMOS based on electron accumulation effect

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Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars

Cited by 12 publications

References 11 publications

Biphase Pd Nanosheets with Atomic‐Hybrid RhOx/Pd Amorphous Skins Disentangle the Activity‐Stability Trade‐Off in Oxygen Reduction Reaction

Biphase Pd Nanosheets with Atomic‐Hybrid RhOx/Pd Amorphous Skins Disentangle the Activity‐Stability Trade‐Off in Oxygen Reduction Reaction

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD simulation study

Study of ultra-low specific on-resistance and high breakdown voltage SOI LDMOS based on electron accumulation effect

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Biphase Pd Nanosheets with Atomic‐Hybrid RhO_x/Pd Amorphous Skins Disentangle the Activity‐Stability Trade‐Off in Oxygen Reduction Reaction

Biphase Pd Nanosheets with Atomic‐Hybrid RhO_x/Pd Amorphous Skins Disentangle the Activity‐Stability Trade‐Off in Oxygen Reduction Reaction