DOI: 10.1109/isscc.1983.1156510
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Abstract: IN RECENT YEARS it has been well established that GaAs FET oscillators can be used as sources of power in the microwave frequency region. Their attraction lies in the low voltage requirement, the high dc to RF conversion efficiency and the extra degree of freedom provided by the third terminal. Despite all of these useful features their application in practical microwave systems has been limited due to high close-to-carrier FM noise. It is also inhibiting their application in the potentially attractive GaAs m…

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