2007
DOI: 10.1088/0957-4484/18/9/095203
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Reduced contact resistance between an individual single-walled carbon nanotube and a metal electrode by a local point annealing

Abstract: The achievement of low-resistance contact is a key requirement for carbon-electrode electronics. In this study, we have obtained contacts with very low resistance between an individual single-walled carbon nanotube (SWNT) and palladium (Pd) electrodes using electric-current-induced Joule heating without destroying the field effect transistor device that these form. The SWNT is deposited onto Pd electrodes prepatterned on a SiO2/Si substrate, through which an electrical pulse is applied for a microsecond durat… Show more

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Cited by 79 publications
(61 citation statements)
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“…The open tip remains the highest temperature zone of the channel until the I guest is reached (2nd). Then, the temperature at the outer layers of the turbostratic carbon shell is sufficiently high to thermally weld it to the Au surface 14 at the contact point (re-deposition of the sublimed chalcogenide may aid in this process and contribute to minimize the electrical contact resistance). Immediately after this contact optimization, the end is cooled down due to the heat-sinking action of the metallic electrode.…”
Section: Discussionmentioning
confidence: 99%
“…The open tip remains the highest temperature zone of the channel until the I guest is reached (2nd). Then, the temperature at the outer layers of the turbostratic carbon shell is sufficiently high to thermally weld it to the Au surface 14 at the contact point (re-deposition of the sublimed chalcogenide may aid in this process and contribute to minimize the electrical contact resistance). Immediately after this contact optimization, the end is cooled down due to the heat-sinking action of the metallic electrode.…”
Section: Discussionmentioning
confidence: 99%
“…Contact resistance has been shown to be important in these applications as well, 11 and reducing the tunneling barrier at van der Waals-dominated nanotube contacts has been attempted with pulsed annealing 12 and electroless metal deposition. 13 In the present study, we seek to increase the area of contact as well as the quality of contact between carbon nanotubes and the contacting surface.…”
Section: Introductionmentioning
confidence: 99%
“…Origin of the conductivity peaks in SWNT paper A possible cause of this removal of defect barriers, impurities, adsorbed molecules, or residues in irradiated SWNT paper is thermal annealing by the heat released by the collisions of the irradiating ions and target atoms knocked out by the incoming ions (our group recently investigated [27] the annealing of tunnelling barriers between a SWNT and a metal electrode by Joule heating due to a current pulse). As mentioned in the Introduction, significant healing of irradiation-induced defects by annealing at 450 • C was observed in multi-wall carbon nanotubes [13], and lesser temperatures are likely to affect the resistance due to desorption of impurities from intertube contacts or improved alignment of nanotubes within a bundle.…”
mentioning
confidence: 99%