Redox-mediated transformation of a Tb<sub>2</sub>O<sub>3</sub>(111) thin film from the cubic fluorite to bixbyite structure

Lee, Christopher J; Sayal, Ameen; Vashishtha, Saumye; Weaver, Jason F.

doi:10.1039/c9cp05083c

Cited by 7 publications

(2 citation statements)

References 55 publications

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“…As with Eu, Gd, and Sm, a shakedown peak is also present at 148.3 eV for Tb(III) and 148.2 eV for Tb(II). In previous XPS studies of Tb(III) complexes, the 4d peaks could not be discerned and were often very broad. ,,− …”

Section: Resultsmentioning

confidence: 92%

High-Resolution X-ray Photoelectron Spectroscopy of Organometallic (C₅H₄SiMe₃)₃Ln^III and [(C₅H₄SiMe₃)₃Ln^II]^1– Complexes (Ln = Sm, Eu, Gd, Tb)

et al. 2021

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The capacity of X-ray photoelectron spectroscopy (XPS) to provide information on the electronic structure of molecular organometallic complexes of Ln(II) ions (Ln = lanthanide) has been examined for the first time. XPS spectra were obtained on the air-sensitive molecular trivalent 4f n Cp′ 3 Ln III complexes (Ln = Sm, Eu, Gd, Tb; Cp′ = C 5 H 4 SiMe 3 ) and compared to those of the highly reactive divalent complexes, [K(crypt)]-[Cp′ 3 Ln II ] (crypt = 2.2.2-cryptand), which have either 4f n+1 (Sm, Eu) or 4f n 5d 1 electron configurations (Gd, Tb). The Ln 4d, Si 2p, and C 1s regions of the Ln(III) and Ln(II) complexes were identified and compared. The metal 4d peaks of these molecular lanthanide complexes were used diagnostically to compare oxidation states. The valence region of the Gd(III) and Gd(II) complexes was also examined with XPS and density function theory/random phase approximation (DFT/RPA) calculations, and this led to the tentative assignment of a signal from the 5d 1 electron consistent with a 4f 7 5d 1 electron configuration for Gd(II).

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Section: Resultsmentioning

confidence: 92%

High-Resolution X-ray Photoelectron Spectroscopy of Organometallic (C₅H₄SiMe₃)₃Ln^III and [(C₅H₄SiMe₃)₃Ln^II]^1– Complexes (Ln = Sm, Eu, Gd, Tb)

et al. 2021

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“…Tb 4 O 7 is comprised of Tb +4 ions, which is ascribed to the remarkable steadiness of the formation of a half-filled 4f 7 subshell in the electronic configuration [40]. The Tb 4 O 7 passivation layers have been deposited using different techniques, including metal-organic chemical vapor deposition (MOCVD) [41], reactive physical vapor deposition (RPVD) of metallic terbium [42], and physical vapor deposition (PVD) deposition [43]. Among these, a PVD is a technique that shows promise for creating a consistent and accurately controlled thickness passivation layer.…”

Section: Introductionmentioning

confidence: 99%

Influence of different annealing ambient on terbium oxide passivation layers sputtered using the RF sputtering on silicon substrate

Sifawa,

Mohammad,

Muhammad

et al. 2024

Nano Ex.

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In this work, the terbium oxide (Tb4O7) passivation layers were sputtered using radio frequency (RF) sputtering and then post-annealed in oxygen (O2), nitrogen (N2), argon (Ar), and nitrogen-oxygen-nitrogen (NON) environments. Different characterization techniques were utilized to investigate the detailed influence of these different annealing environments. Grazing incidence X-ray diffraction (GIXRD) patterns indicate a cubic crystal structure in all samples investigated. The sample annealed in Ar ambient reached the highest crystallinity close to 48 nm. The morphological analysis showed a distinct surface structure for all the investigated samples when viewed with field emission scanning electron microscopy (FESEM). Atomic force microscopy (AFM) was utilized to study the surface roughness, and it was found that the Tb4O7 passivation layer annealed in an Ar ambient achieved a higher surface roughness at (1.150 nm). The UV-Vis analysis was performed, and absorbance was determined from reflectance data. The direct bandgap (Eg) was estimated by applying the Kubelka-Munk (KM) approach and found to be 3.28, 3.17, 2.37, and 2.27 eV for O2, N2, Ar, and NON ambients, respectively. These findings highlight the importance of post-deposition annealing treatments using different annealing gases and provide insight into the development of optimal Tb4O7 passivation layers.

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Influence of power and duration on RF sputtering for the formation of terbium oxide passivation layers via the argon ambient

Sifawa,

Mohammad,

Muhammad

et al. 2024

J Mater Sci: Mater Electron

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Redox-mediated transformation of a Tb₂O₃(111) thin film from the cubic fluorite to bixbyite structure

Abstract: Repeated oxidation and reduction transforms a cubic fluorite Tb2O3(111) film to the bixbyite structure.

Cited by 7 publications

References 55 publications

High-Resolution X-ray Photoelectron Spectroscopy of Organometallic (C₅H₄SiMe₃)₃Ln^III and [(C₅H₄SiMe₃)₃Ln^II]^1– Complexes (Ln = Sm, Eu, Gd, Tb)

High-Resolution X-ray Photoelectron Spectroscopy of Organometallic (C₅H₄SiMe₃)₃Ln^III and [(C₅H₄SiMe₃)₃Ln^II]^1– Complexes (Ln = Sm, Eu, Gd, Tb)

Influence of different annealing ambient on terbium oxide passivation layers sputtered using the RF sputtering on silicon substrate

Influence of power and duration on RF sputtering for the formation of terbium oxide passivation layers via the argon ambient

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Redox-mediated transformation of a Tb2O3(111) thin film from the cubic fluorite to bixbyite structure

Abstract: Repeated oxidation and reduction transforms a cubic fluorite Tb2O3(111) film to the bixbyite structure.

Cited by 7 publications

References 55 publications

High-Resolution X-ray Photoelectron Spectroscopy of Organometallic (C5H4SiMe3)3LnIII and [(C5H4SiMe3)3LnII]1– Complexes (Ln = Sm, Eu, Gd, Tb)

High-Resolution X-ray Photoelectron Spectroscopy of Organometallic (C5H4SiMe3)3LnIII and [(C5H4SiMe3)3LnII]1– Complexes (Ln = Sm, Eu, Gd, Tb)

Influence of different annealing ambient on terbium oxide passivation layers sputtered using the RF sputtering on silicon substrate

Influence of power and duration on RF sputtering for the formation of terbium oxide passivation layers via the argon ambient

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Redox-mediated transformation of a Tb₂O₃(111) thin film from the cubic fluorite to bixbyite structure

High-Resolution X-ray Photoelectron Spectroscopy of Organometallic (C₅H₄SiMe₃)₃Ln^III and [(C₅H₄SiMe₃)₃Ln^II]^1– Complexes (Ln = Sm, Eu, Gd, Tb)

High-Resolution X-ray Photoelectron Spectroscopy of Organometallic (C₅H₄SiMe₃)₃Ln^III and [(C₅H₄SiMe₃)₃Ln^II]^1– Complexes (Ln = Sm, Eu, Gd, Tb)