Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Abstract

Using current-voltage (I-V), capacitance-voltage (C-V), and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky) barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene's mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

Adsorption of alkali, alkaline-earth, and 3dtransition metal atoms on silicene

“…Unusual properties of graphene promising for a variety of novel applications [23][24][25][26][27][28] have also triggered significant interest in one or several atom-thick honeycomb structures of binary compounds. Early experimental studies aiming to synthesize and characterize novel monolayer materials have revealed that graphene-like sheets of BN are also stable.…”

Performance Enhancement of a Graphene-Zinc Phosphide Solar Cell Using the Electric Field-Effect

“…The spectrum on Oxide-1 shows a single 2D peak larger than the G peak, a clear sign of single layer graphene. 5,20 The spectrum on Zn 3 P 2 has the same characteristics but with lower signal intensity. The data indicates that we have single layer graphene on our substrate.…”

“…These limitations can be addressed using graphene, which has previously been used to form graphene−semiconductor junctions 5 and solar cells with CdS and CdSe 6,7 semiconductors as well as with Si,5,[8][9][10][11] demonstrating Schottky barrier behavior. 5 Further advances on graphene−semiconductor junctions were demonstrated by building gate-controlled devices in order to modify the Schottky barrier height and the electrical transport across the junction. This design has been used to build a graphene−Si transistor (barristor) 12 and a graphene−organic thin film junction transistors.…”

Vertically Illuminated, Resonant Cavity Enhanced, Graphene–Silicon Schottky Photodetectors

“…∆Φ B (V ) is typically dominant in reverse bias because of the higher potential drop on the Schottky junction, resulting in a more pronounced barrier-lowering Schottky effect [8,61] and SLG Fermi level shift [37,38,61]. On the other hand, in forward bias the potential drop is limited by the built-in voltage (V bi <1V) [8], so that ∆Φ B (V ) can be neglected and Φ B ∼ Φ B0 .…”