Reconstruction of depth distribution of tritium in materials by β-ray induced X-ray spectrometry

Geant4 Monte Carlo simulations for sensitivity investigations of an experimental facility for the measurement of tritium surface contaminations by BIXS

“…Tritium depth profiling by BIXS on a m scale has been reported in the literature [9], [10] but it is regarded as very difficult on a 100 nm scale. Simulated spectral shapes for a Table 3.…”

Tritium and helium analyses in thin films by enhanced proton backscattering

“…Among the analysis techniques developed for measuring tritium and helium in materials, ion beam analysis (IBA) techniques, including nuclear reaction analysis (NRA) [3,4], elastic recoil detection analysis (ERDA) [5,6] and enhanced proton backscattering (EPBS) [7,8] have been developed for many years and can provide information of tritium and helium concentration and depth distribution in materials in an almost nondestructive manner. In recent years, based on the work of Matsuyama, et al [9], we tried to develop the β-decay induced X-ray spectroscopy (BIXS) into a routine, accurate and in situ tritium analysis method for tritium-containing films by incorporating Monte Carlo simulation and Tikhonov regularization for dealing with the ill-posed inverse problems involved in the BIXS method [10][11][12][13][14]. We have employed the BIXS method to analyze tritium concentrations and depth distributions in tritium-containing Ti films with Mo substrate, and found that the total tritium concentrations obtained by the BIXS method were in good agreement with the results given by PVT method [13].…”